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Development of the Two-Shaping-Elements (TSE) method for silicon sheet growth
by
Brantov, S.K.
,
Filonov, K.N.
,
Epelbaum, B.M.
,
Miheeva, L.V.
,
Sitnikov, A.M.
Published in
Journal of crystal growth
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Journal Of Crystal Growth
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Subjects
Duenne Schicht
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Duennschichttechnik
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Elementhalbleiter
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Fertigungsverfahren
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Folie
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Formgebung
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Geometrische Form
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Halbleiterschicht
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Halbleiterwachstum
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Halbleiterwerkstoff
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Kohlenstoff
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Kristallwachstum
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Kristallwachstum Aus Der Schmelze
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Kristallzuechtung
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Lichtausbeute
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Schichtwachstum
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Schmelze
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Silicium
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Sonnenbatterie
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Substrat
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Elsevier Sciencedirect Journals
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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