Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs by Seonghoon Jin, Fischetti, M.V., Ting-Wei Tang

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Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length by Fischetti, M.V., O'Regan, T.P., Sudarshan Narayanan, Sachs, C., Seonghoon Jin, Jiseok Kim, Yan Zhang

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Hybrid-orientation technology (HOT): opportunities and challenges by Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation by Seonghoon Jin, Ting-Wei Tang, Fischetti, M.V.

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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation by Seonghoon Jin, Fischetti, M.V., Ting-wei Tang

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Scaling MOSFETs to the Limit: A Physicists's Perspective by Fischetti, M.V.

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Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation by Laux, S.E., Kumar, A., Fischetti, M.V.

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Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates by Ragnarsson, L.-A., Guha, S., Bojarczuk, N.A., Cartier, E., Fischetti, M.V., Rim, K., Karasinski, J.

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Does Circulation in Individual Current States Survive in the Total Current Density? by Laux, S.E., Kumar, A., Fischetti, M.V.

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Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K by Laux, S.E., Fischetti, M.V.

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A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon by Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Iizuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Hongchin Lin, Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Ting-Wei Tang, Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Shiuh-Luen Wang, Xiaolin Wang, Chiang-Sheng Yao, Yoder, P.D., Yoshii, A.

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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport by Fischetti, M.V.

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Charge trapping in high k gate dielectric stacks by Zafar, S., Callegari, A., Gusev, E., Fischetti, M.V.

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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET's by Fischetti, M.V., Laux, S.E.

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Hot electrons in SiO2: ballistic to steady-state transport by Fischetti, M.V., DiMaria, D.J.

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Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies by Tsang, J.C., Fischetti, M.V.

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Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors by Fischetti, M.V., Laux, S.E.

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Dual stress liner enhancement in hybrid orientation technology by Sheraw, C.D., Yang, M., Fried, D.M., Costrini, G., Kanarsky, T., Lee, W.-H., Chan, V., Fischetti, M.V., Holt, J., Black, L., Naeem, M., Panda, S., Economikos, L., Groschopf, J., Kapur, A., Li, Y., Mo, R.T., Bonnoit, A., Degraw, D., Luning, S., Chidambarrao, D., Wang, X., Bryant, A., Brown, D., Sung, C.-Y., Agnello, P., Ieong, M., Huang, S.-F., Chen, X., Khare, M.

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Electrical characterization of Al 2 O 3 n-channel MOSFETs with aluminum gates by Ragnarsson, L.-A., Guha, S., Bojarczuk, N.A., Cartier, E., Fischetti, M.V., Rim, K., Karasinski, J.

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Technology development & design for 22 nm InGaAs/InP-channel MOSFETs by Rodwell, M., Wistey, M., Singisetti, U., Burek, G., Gossard, A., Stemmer, S., Engel-Herbert, R., Hwang, Y., Zheng, Y., Van de Walle, C., Asbeck, P., Taur, Y., Kummel, A., Yu, B., Wang, D., Yuan, Y., Palmstrom, C., Arkun, E., Simmonds, P., McIntyre, P., Harris, J., Fischetti, M.V., Sachs, C.

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