Search Results - Fonder, J.-B.

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  1. 1
    Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

    Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test by Fonder, J.-B., Chevalier, L., Genevois, C., Latry, O., Duperrier, C., Temcamani, F., Maanane, H.

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  2. 2
    Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

    Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life by Fonder, J.-B., Latry, O., Duperrier, C., Stanislawiak, M., Maanane, H., Eudeline, P., Temcamani, F.

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  3. 3
    A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing

    A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing by Fonder, J., Duperrier, C., Latry, O., Stanislawiak, M., Maanane, H., Eudeline, P., Temcamani, F.

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