CMOS Pixel Potentials Extraction Method From Test Structures Based on EKV Model by Doyen, C., Ricq, S., Fonteneau, P., Marcelot, O., Magnan, P.

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Ultra-low power 1T-DRAM in FDSOI technology by El Dirani, H., Lee, K.H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch, Mescot, X., Fonteneau, P., Broquin, J.-E., Ghibaudo, G., Galy, Ph, Gamiz, F., Taur, Y., Kim, Y.-T., Cristoloveanu, S., Bawedin, M.

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A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters by Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch, Mescot, X., Fonteneau, P., Galy, Ph, Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., Bawedin, M.

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A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms by Solaro, Y., Fonteneau, P., Legrand, C.A., Fenouillet-Beranger, C., Ferrari, P., Cristoloveanu, S.

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Both mannose and beta-glucan receptors are involved in phagocytosis of unopsonized, heat-killed Saccharomyces cerevisiae by murine macrophages by Giaimis, Jean, Lombard, Wes, Fonteneau, Paul, Muller, Christian D., Levy, Rachel, Makaya‐Kumba, Madeleine, Lazdins, Janis, Poindron, Philippe

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Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications by Lee, K. H., Dirani, H. El, Fonteneau, P., Bawedin, M., Sato, S., Cristoloveanu, S.

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A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters by Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch, Mescot, X., Fonteneau, P., Galy, Ph, Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y-T., Wan, J., Bawedin, M.

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Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes by El Dirani, H., Fonteneau, P., Solaro, Y., Ferrari, P., Cristoloveanu, S.

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Self-organized 1D nanostructures on the β-SiC(100) surface: silicon atomic lines and dimer vacancy chains by Derycke, V, Pham, Nga Phuong, Fonteneau, P, Soukiassian, P, Aboulet-Nze, P, Monteil, Y, Mayne, A.J, Dujardin, G, Gautier, J

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Sharp-switching Z2-FET device in 14 nm FDSOI technology by El Dirani, H., Solaro, Y., Fonteneau, P., Ferrari, P., Cristoloveanu, S.

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From K atom pairs to K atomic chains: A semiconducting 2×3 to metallic 2×1 transition on the β-SiC(100) c(4×2) surface by Derycke, V., Fonteneau, P., Hwu, Y. K., Soukiassian, P.

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Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes by Navarro, C., Bawedin, M., Andrieu, F., Cluzel, J., Solaro, Y., Fonteneau, P., Martinez, F., Sagnes, B., Cristoloveanu, S.

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From K atom pairs to K atomic chains: A semiconducting 2 × 3 to metallic 2 × 1 transition on the β - Si C ( 100 ) c ( 4 × 2 ) surface by Derycke, V., Fonteneau, P., Hwu, Y. K., Soukiassian, P.

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Novel back-biased UTBB lateral SCR for FDSOI ESD protections by Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alexandre, Fenouillet-Beranger, Claire, Ferrari, Philippe, Cristoloveanu, Sorin

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Modeling a SCR-based protection structure for RF-ESD co-design simulations by Romanescu, A., Ferrari, P., Arnould, J., Fonteneau, P., Legrand, C.

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Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices by Cristoloveanu, S., Wan, J., Ferrari, P., Bawedin, M., Navarro, C., Zaslavsky, A., Le Royer, C., Villalon, A., Fenouillet-Beranger, C., Solaro, Y., Fonteneau, P.

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First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration by Golanski, D., Fonteneau, P., Fenouillet-Beranger, C., Cros, A., Monsieur, F., Guitard, N., Legrand, C-A, Dray, A., Richier, C., Beckrich, H., Mora, P., Bidal, G., Weber, O., Saxod, O., Manouvrier, J-R, Galy, P., Planes, N., Arnaud, F.

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Modeling a SCR-based protection structure for RF-ESD co-design simulations by Romanescu, A., Ferrari, P., Arnould, J-D, Fonteneau, P., Legrand, C-A

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Enhancement of devices performance of hybrid FDSOI/bulk technology by using UTBOX sSOI substrates by Fenouillet-Beranger, C., Perreau, P., Weber, O., Ben-Akkez, I., Cros, A., Bajolet, A., Haendler, S., Fonteneau, P., Gouraud, P., Richard, E., Abbate, F., Barge, D., Pellissier-Tanon, D., Dumont, B., Andrieu, F., Passieux, J., Bon, R., Barral, V., Golanski, D., Petit, D., Planes, N., Bonin, O., Schwarzenbach, W., Poiroux, T., Faynot, O., Haond, M., Boeuf, F.

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Partial expression of the lpr locus in the heterozygous state: presence of autoantibodies by Jachez, B, Montecino-Rodriguez, E, Fonteneau, P, Loor, F

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