Search Results - Formicone, G.F.

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  1. 1
    Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate

    Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate by Formicone, G.F, Vasileska, D, Ferry, D.K

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  2. 2
    Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

    Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer by Formicone, G.F., Saraniti, M., Vasileska, D.Z., Ferry, D.K.

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    Analysis of distributed multi-finger high-power transistors using the FDTD method

    Analysis of distributed multi-finger high-power transistors using the FDTD method by Formicone, G.F., Burger, W., Pryor, B.

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  4. 4
    Transport in the surface channel of strained Si on a relaxed Si 1− xGe x substrate

    Transport in the surface channel of strained Si on a relaxed Si 1− xGe x substrate by Formicone, G.F, Vasileska, D, Ferry, D.K

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