Curvature and bow of bulk GaN substrates by Foronda, Humberto M., Romanov, Alexey E., Young, Erin C., Robertson, Christian A., Beltz, Glenn E., Speck, James S.

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Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition by Foronda, Humberto M., Mazumder, Baishakhi, Young, Erin C., Laurent, Matthew A., Li, Youli, DenBaars, Steven P., Speck, James S.

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Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition by Foronda, Humberto M, Laurent, Matthew A, Yonkee, Benjanim, Keller, Stacia, DenBaars, Steven P, Speck, James S

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Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy by Foronda, Humberto M., Hunter, Daniel A., Pietsch, Mike, Sulmoni, Luca, Muhin, Anton, Graupeter, Sarina, Susilo, Norman, Schilling, Marcel, Enslin, Johannes, Irmscher, Klaus, Martin, Robert W., Wernicke, Tim, Kneissl, Michael

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy by Marcinkevičius, Saulius, Uždavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers by Foronda, Humberto M., Wu, Feng, Zollner, Christian, Alif, Muhammad Esmed, Saifaddin, Burhan, Almogbel, Abdullah, Iza, Michael, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

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Structure and properties of La-modified Na0.5Bi0.5TiO3 at ambient and elevated temperatures by Aksel, Elena, Forrester, Jennifer S., Foronda, Humberto M., Dittmer, Robert, Damjanovic, Dragan, Jones, Jacob L.

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Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies by Farzana, Esmat, Foronda, Humberto M., Jackson, Christine M., Razzak, Towhidur, Zhang, Zeng, Speck, James S., Arehart, Aaron R., Ringel, Steven A.

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Quantification of Trace-Level Silicon Doping in Al x Ga 1– x N Films Using Wavelength-Dispersive X-Ray Microanalysis by Spasevski, Lucia, Buse, Ben, Edwards, Paul R., Hunter, Daniel A., Enslin, Johannes, Foronda, Humberto M., Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J., Kneissl, Michael, Martin, Robert W.

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Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis by Spasevski, Lucia, Buse, Ben, Edwards, Paul R., Hunter, Daniel A., Enslin, Johannes, Foronda, Humberto M., Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J., Kneissl, Michael, Martin, Robert W.

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Publisher's Note: “Curvature and bow of bulk GaN substrates” [J. Appl. Phys. 120, 035104 (2016)] by Foronda, Humberto M., Romanov, Alexey E., Young, Erin C., Robertson, Christian A., Beltz, Glenn E., Speck, James S.

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy by Marcinkevicius, Saulius, Uzdavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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