Optical gain in GaInN/GaN heterostructures by Frankowsky, G., Steuber, F., Härle, V., Scholz, F., Hangleiter, A.

Get full text

Optical gain in the nitrides: are there differences to other III–V semiconductors? by Hangleiter, A., Frankowsky, G., Härle, V., Scholz, F.

Get full text

Selective area epitaxy of GaInAs using conventional and novel group III precursors by Scholz, F., Ottenwälder, D., Eckel, M., Wild, M., Frankowsky, G., Wacker, T., Hangleiter, A.

Get full text

Control of monolayer terrace formation in selective epitaxy by Ottenwälder, D., Frankowsky, G., Gfrörer, O., Hangleiter, A., Scholz, F.

Get full text

Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor by Eckel, M., Ottenwälder, D., Scholz, F., Frankowsky, G., Wacker, T., Hangleiter, A.

Get full text

Investigation of strain effects in selectively grown GaAs on Si by Zieger, K., Stauss, P., Frankowsky, G., Hangleiter, A., Scholz, F., Spitzer, J.

Get full text

A 7F(2) cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs by Hoenigschmid, H, Frey, A, DeBrosse, J K, Kirihata, T, Mueller, G, Storaska, D W, Daniel, G, Frankowsky, G, Guay, K P, Hanson, D R, Hsu, L L-C, Ji, B, Netis, D G, Panaroni, S, Radens, C, Reith, A M, Terletzki, H, Weinfurtner, O, Alsmeier, J

Get full text

Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells by Hangleiter, A., Frankowsky, G., Harle, V., Steuber, F., Scholz, F.

Request full text

A 390-mm/sup 2/, 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture by Kirihata, T., Mueller, G., Ji, B., Frankowsky, G., Ross, J.M., Terletzki, H., Netis, D.G., Weinfurtner, O., Hanson, D.R., Daniel, G., Hsu, L.L.-C., Sotraska, D.W., Reith, A.M., Hug, M.A., Guay, K.P., Selz, M., Poechmueller, P., Hoenigschmid, H., Wordeman, M.R.

Get full text

A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs by Hoenigschmid, H, Frey, A, DeBrosse, J.K, Kirihata, T, Mueller, G, Storaska, D.W, Daniel, G, Frankowsky, G, Guay, K.P, Hanson, D.R, Hsu, L.L.-C, Ji, B, Netis, D.G, Panaroni, S, Radens, C, Reith, A.M, Terletzki, H, Weinfurtner, O, Alsmeier, J, Weber, W, Wordeman, M.R

Get full text

A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs by Hoenigschmid, H., Frey, A., DeBrosse, J.K., Kirihata, T., Mueller, G., Storaska, D.W., Daniel, G., Frankowsky, G., Guay, K.P., Hanson, D.R., Hsu, L.L.-C., Ji, B., Netis, D.G., Panaroni, S., Radens, C., Reith, A.M., Terletzki, H., Weinfurtner, O., Alsmeier, J., Weber, W., Wordeman, M.R.

Get full text

A 7F super(2) cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs by Hoenigschmid, H, Frey, A, DeBrosse, J K, Kirihata, T, Mueller, G, Storaska, D W, Daniel, G, Frankowsky, G, Guay, K P, Hanson, DR, Hsu, LL-C, Ji, B, Netis, D G, Panaroni, S, Radens, C, Reith, A M, Terletzki, H, Weinfurtner, O, Alsmeier, J, Weber, W, Wordeman, M R

Get full text

A 390-mm(2), 16-bank, 1-Gb DDR SDRAM with hybrid bitlinearchitecture by Kirihata, T, Mueller, G, Ji, B, Frankowsky, G, Ross, J M, Terletzki, H, Netis, D G, Weinfurtner, O, Hanson, D R, Daniel, G, Hsu, L L-C, Sotraska, D W, Reith, A M, Hug, M A, Guay, K P, Selz, M, Poechmueller, P, Hoenigschmid, H, Wordeman, M R

Get full text

Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE by Ottenwalder, D., Frankowsky, G., Wild, M., Gfrorer, O., Hangleiter, A., Scholz, F.

Request full text

Planar and selective MOVPE of GaInAs-InP structures with novel group III and group V precursors by Scholz, F., Ottenwalder, D., Eckel, M., Locke, K., Frankowsky, G., Wacker, T.

Request full text

A 390-mm super(2), 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture by Kirihata, T, Mueller, G, Ji, B, Frankowsky, G, Ross, J M, Terletzki, H, Netis, D G, Weinfurtner, O, Hanson, DR, Daniel, G, Hsu, LL-C, Sotraska, D W, Reith, A M, Hug, MA, Guay, K P, Selz, M, Poechmueller, P, Hoenigschmid, H, Wordeman, M R

Get full text

Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures by Tütken, T., Frankowsky, G., Hangleiter, A., Härle, V., Streubel, K., Scholz, F.

Get full text

A 113 mm/sup 2/ 600 Mb/s/pin 512 Mb DDR2 SDRAM with vertically-folded bitline architecture by Kirihata, T., Mueller, G., Clinton, M., Loeffler, S., Ji, B., Terletzki, H., Hanson, D., Chorng-Lil Hwang, Lehmann, G., Storaska, D., Daniel, G., Hsu, L., Weinfurtner, O., Boehler, T., Schnell, J., Frankowsky, G., Netis, D., Ross, J., Reith, A., Kiehl, O., Wordeman, M.

Request full text

A 390 mm/sup 2/ 16-bank 1 Gb DDR SDRAM with hybrid bitline architecture by Kirihata, T., Mueller, G., Ji, B., Frankowsky, G., Ross, J., Terletzki, H., Netis, D., Weinfurtner, O., Hanson, D., Daniel, G., Hsu, L., Storaska, D., Reith, A., Hug, M., Guay, K., Selz, M., Poechmueller, P., Hoenigschmid, H., Wordeman, M.

Request full text

Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy by Frankowsky, G., Wacker, T., Hangleiter, A., Ottenwalder, D., Scholz, F.

Request full text