High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects by Bao, Wenzhong, Cai, Xinghan, Kim, Dohun, Sridhara, Karthik, Fuhrer, Michael S.

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Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications by Wan, Jiayu, Lacey, Steven D, Dai, Jiaqi, Bao, Wenzhong, Fuhrer, Michael S, Hu, Liangbing

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Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers by Chen, Shao-Yu, Zheng, Changxi, Fuhrer, Michael S, Yan, Jun

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Overcoming Boltzmann’s Tyranny in a Transistor via the Topological Quantum Field Effect by Nadeem, Muhammad, Di Bernardo, Iolanda, Wang, Xiaolin, Fuhrer, Michael S, Culcer, Dimitrie

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Tuning Bulk and Surface Conduction in the Proposed Topological Kondo Insulator SmB6 by Syers, Paul, Kim, Dohun, Fuhrer, Michael S, Paglione, Johnpierre

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Correlated charged impurity scattering in graphene by Yan, Jun, Fuhrer, Michael S

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Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2 by Yamamoto, Mahito, Dutta, Sudipta, Aikawa, Shinya, Nakaharai, Shu, Wakabayashi, Katsunori, Fuhrer, Michael S, Ueno, Keiji, Tsukagoshi, Kazuhito

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators by Bhattacharyya, Semonti, Akhgar, Golrokh, Gebert, Matthew, Karel, Julie, Edmonds, Mark T., Fuhrer, Michael S.

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Electric-field-tuned topological phase transition in ultrathin Na3Bi by Collins, James L., Tadich, Anton, Wu, Weikang, Gomes, Lidia C., Rodrigues, Joao N. B., Liu, Chang, Hellerstedt, Jack, Ryu, Hyejin, Tang, Shujie, Mo, Sung-Kwan, Adam, Shaffique, Yang, Shengyuan A., Fuhrer, Michael S., Edmonds, Mark T.

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Hybridized Hyperbolic Surface Phonon Polaritons at α‑MoO3 and Polar Dielectric Interfaces by Zhang, Qing, Ou, Qingdong, Hu, Guangwei, Liu, Jingying, Dai, Zhigao, Fuhrer, Michael S, Bao, Qiaoliang, Qiu, Cheng-Wei

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Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin‐Gapless Semiconductors—A Perspective Review by Nadeem, Muhammad, Hamilton, Alex R., Fuhrer, Michael S., Wang, Xiaolin

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Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 by Kim, Dohun, Cho, Sungjae, Butch, Nicholas P., Syers, Paul, Kirshenbaum, Kevin, Adam, Shaffique, Paglione, Johnpierre, Fuhrer, Michael S.

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Anisotropic Etching of Atomically Thin MoS2 by Yamamoto, Mahito, Einstein, Theodore L, Fuhrer, Michael S, Cullen, William G

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Hyperbolic polaritonic crystals with configurable low-symmetry Bloch modes by Lv, Jiangtao, Wu, Yingjie, Liu, Jingying, Gong, Youning, Si, Guangyuan, Hu, Guangwei, Zhang, Qing, Zhang, Yupeng, Tang, Jian-Xin, Fuhrer, Michael S., Chen, Hongsheng, Maier, Stefan A., Qiu, Cheng-Wei, Ou, Qingdong

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Approaching the limits of transparency and conductivity in graphitic materials through lithium intercalation by Bao, Wenzhong, Wan, Jiayu, Han, Xiaogang, Cai, Xinghan, Zhu, Hongli, Kim, Dohun, Ma, Dakang, Xu, Yunlu, Munday, Jeremy N., Drew, H. Dennis, Fuhrer, Michael S., Hu, Liangbing

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Oxidation of Monolayer WS2 in Ambient Is a Photoinduced Process by Kotsakidis, Jimmy C, Zhang, Quianhui, Vazquez de Parga, Amadeo L, Currie, Marc, Helmerson, Kristian, Gaskill, D. Kurt, Fuhrer, Michael S

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Layer Number and Stacking Sequence Imaging of Few-Layer Graphene by Transmission Electron Microscopy by Ping, Jinglei, Fuhrer, Michael S

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Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors by Cho, Sungjae, Butch, Nicholas P, Paglione, Johnpierre, Fuhrer, Michael S

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Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry by Yan, Jun, Fuhrer, Michael S

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Coherent topological transport on the surface of Bi2Se3 by Kim, Dohun, Syers, Paul, Butch, Nicholas P., Paglione, Johnpierre, Fuhrer, Michael S.

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