Search Results - Fukano, Gou

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    A 0.7 V Single-Supply SRAM With 0.495 $\mu$m$^{2}$ Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme

    A 0.7 V Single-Supply SRAM With 0.495 $\mu$m$^{2}$ Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme by Kushida, Keiichi, Suzuki, Azuma, Fukano, Gou, Kawasumi, Atsushi, Hirabayashi, Osamu, Takeyama, Yasuhisa, Sasaki, Takahiko, Katayama, Akira, Fujimura, Yuki, Yabe, Tomoaki

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    A 0.7 V Single-Supply SRAM With 0.495 μm2 Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme

    A 0.7 V Single-Supply SRAM With 0.495 μm2 Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme by KUSHIDA, Keiichi, SUZUKI, Azuma, FUKANO, Gou, KAWASUMI, Atsushi, HIRABAYASHI, Osamu, TAKEYAMA, Yasuhisa, SASAKI, Takahiko, KATAYAMA, Akira, FUJIMURA, Yuki, YABE, Tomoaki

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