Search Results - Fukumoto, Shoya

  • Showing 1 - 9 results of 9
Refine Results
  1. 1
    Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

    Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning by Fukumoto, Shoya, Matsumae, Takashi, Kurashima, Yuichi, Takagi, Hideki, Umezawa, Hitoshi, Hayase, Masanori, Higurashi, Eiji

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    Hydrophilic Bonding of GaN and Diamond Substrates

    Hydrophilic Bonding of GaN and Diamond Substrates by Matsumae, Takashi, Okita, Sho, Fukumoto, Shoya, Hayase, Masanori, Kurashima, Yuichi, Takagi, Hideki

    Published in ECS transactions
    Get full text
    Article
    Save to List
    Saved in:
  3. 3
    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H2SO4/H2O2 mixture and NH3/H2O2 mixture

    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H2SO4/H2O2 mixture and NH3/H2O2 mixture by Fukumoto, Shoya, Matsumae, Takashi, Kurashima, Yuichi, Takagi, Hideki, Hayase, Masanori, Higurashi, Eiji

    Get full text
    Article
    Save to List
    Saved in:
  4. 4
    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H 2 SO 4 /H 2 O 2 mixture and NH 3 /H 2 O 2 mixture

    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H 2 SO 4 /H 2 O 2 mixture and NH 3 /H 2 O 2 mixture by Fukumoto, Shoya, Matsumae, Takashi, Kurashima, Yuichi, Takagi, Hideki, Hayase, Masanori, Higurashi, Eiji

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  5. 5
    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H 2 SO 4 /H 2 O 2 mixture and NH 3 /H 2 O 2 mixture

    Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H 2 SO 4 /H 2 O 2 mixture and NH 3 /H 2 O 2 mixture by Fukumoto, Shoya, Matsumae, Takashi, KURASHIMA, Yuichi, Takagi, Hideki, Hayase, Masanori, Higurashi, Eiji

    Get full text
    Article
    Save to List
    Saved in:
  6. 6
    Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer

    Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer by Matsumae, Takashi, Okita, Sho, Fukumoto, Shoya, Hayase, Masanori, Kurashima, Yuichi, Takagi, Hideki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  7. 7
    Heterogeneous GaN-Si integration via plasma activation direct bonding

    Heterogeneous GaN-Si integration via plasma activation direct bonding by Matsumae, Takashi, Fengwen, Mu, Fukumoto, Shoya, Hayase, Masanori, Kurashima, Yuichi, Higurashi, Eiji, Takagi, Hideki, Suga, Tadatomo

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  8. 8
    Observation of large spin conversion anisotropy in bismuth

    Observation of large spin conversion anisotropy in bismuth by Fukumoto, Naoki, Ohshima, Ryo, Aoki, Motomi, Fuseya, Yuki, Matsushima, Masayuki, Shigematsu, Ei, Shinjo, Teruya, Ando, Yuichiro, Sakamoto, Shoya, Shiga, Masanobu, Miwa, Shinji, Shiraishi, Masashi

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  9. 9
    Observation of gigantic spin conversion anisotropy in bismuth

    Observation of gigantic spin conversion anisotropy in bismuth by Fukumoto, Naoki, Ohshima, Ryo, Aoki, Motomi, Fuseya, Yuki, Matsushima, Masayuki, Shigematsu, Ei, Teruya Shinjo, Ando, Yuichiro, Sakamoto, Shoya, Shiga, Masanobu, Miwa, Shinji, Shiraishi, Masashi

    Published in arXiv.org
    Get full text
    Article
    Save to List
    Saved in:

Search Tools: