Evolution of perpendicular magnetized tunnel junctions upon annealing by Devolder, Thibaut, Couet, S., Swerts, J., Furnemont, A.

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Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions by Devolder, T., Kim, Joo-Von, Garcia-Sanchez, F., Swerts, J., Kim, W., Couet, S., Kar, G., Furnemont, A.

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[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications by Liu, E., Swerts, J., Couet, S., Mertens, S., Tomczak, Y., Lin, T., Spampinato, V., Franquet, A., Van Elshocht, S., Kar, G., Furnemont, A., De Boeck, J.

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BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap by Swerts, J., Mertens, S., Lin, T., Couet, S., Tomczak, Y., Sankaran, K., Pourtois, G., Kim, W., Meersschaut, J., Souriau, L., Radisic, D., Van Elshocht, S., Kar, G., Furnemont, A.

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Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system by Devolder, T., Couet, S., Swerts, J., Liu, E., Lin, T., Mertens, S., Furnemont, A., Kar, G.

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Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy by Liu, Enlong, Swerts, J., Devolder, T., Couet, S., Mertens, S., Lin, T., Spampinato, V., Franquet, A., Conard, T., Van Elshocht, S., Furnemont, A., De Boeck, J., Kar, G.

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Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy by Devolder, T., Liu, E., Swerts, J., Couet, S., Lin, T., Mertens, S., Furnemont, A., Kar, G., De Boeck, J.

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Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance by Tomczak, Y., Swerts, J., Mertens, S., Lin, T., Couet, S., Liu, E., Sankaran, K., Pourtois, G., Kim, W., Souriau, L., Van Elshocht, S., Kar, G., Furnemont, A.

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3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory by Verreck, D., Arreghini, A., Schanovsky, F., Stanojevic, Z., Steiner, K., Mitterbauer, F., Karner, M., Van den bosch, G., Furnemont, A.

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Application of Single Pulse Dynamics to Model Program and Erase Cycling-Induced Defects in the Tunnel Oxide of Charge-Trapping Devices by Bastos, J. P., Arreghini, A., Verreck, D., Schanovsky, F., Degraeve, R., Linten, D., Rosmeulen, M., Van den Bosch, G., Furnemont, A.

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First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices by Delhougne, R., Arreghini, A., Rosseel, E., Hikavyy, A., Vecchio, E., Zhang, L., Pak, M., Nyns, L., Raymaekers, T., Jossart, N., Breuil, L., V-Palayam, S. S., Tan, C.-L., Van den bosch, G., Furnemont, A.

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Root Cause of Charge Loss in a Nitride-Based Localized Trapping Memory Cell by Furnemont, A., Rosmeulen, M., van der Zanden, K., Van Houdt, J., De Meyer, K., Maes, H.

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Needs Assessment for the Development of a Sustainability Curriculum for Surgical Residents by Matthys, Madeline, Wang, Jane, Sathe, Tejas S., Wang, Kaiyi, Gandhi, Seema, Lee, Hanmin, Alseidi, Adnan, Bourdillon, Alexandra, Brian, Riley, Calthorpe, Lucia, Chu, Simon N., Eshaghzadeh, Edwin, Faktor, Kara, Huang, Jasmine, Godier-Furnemont, Amandine, Lund, Sarah, Oslock, Wendelyn, Sorrentino, Thomas, Starr, Nichole, Tsay, Ellen, Yap, Ava, Zivanov, Catherine N.

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New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories by Furnemont, A., Rosmeulen, M., van der Zanden, K., Van Houdt, J., De Meyer, K., Maes, H.

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Program charge interference and mitigation in vertically scaled single and multiple-channel 3D NAND flash memory by Verreck, D., Arreghini, A., den Bosch, G. Van, Furnemont, A., Rosmeulen, M.

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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM by Garello, K., Yasin, F., Hody, H., Couet, S., Souriau, L., Sharifi, S. H., Swerts, J., Carpenter, R., Rao, S., Kim, W., Wu, J., Sethu, K. K. V., Pak, M., Jossart, N., Crotti, D., Furnemont, A., Kar, G. S.

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High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node by Gupta, M., Perumkunnil, M., Garello, K., Rao, S., Yasin, F., Kar, G.S., Furnemont, A.

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Feasibility of InxGa1-xAs High Mobility Channel for 3-D NAND Memory by Capogreco, E., Subirats, A., Lisoni, J. G., Arreghini, A., Kunert, B., Guo, W., Tan, C.-L, Delhougne, R., Van den bosch, G., De Meyer, K., Furnemont, A., Van Houdt, J.

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Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices by Breuil, L., El Hajjam, G. K., Ramesh, S., Ajaykumar, A., Arreghini, A., Zhang, L., Sebaai, F., Nyns, L., Raymaekers, T., Rosmeulen, M., Van den Bosch, G., Furnemont, A.

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Impact of Mechanical Stress on the Electrical Performance of 3D NAND by Kruv, A., Arreghini, A., Gonzalez, M., Verreck, D., Van den bosch, G., De Wolf, I., Furnemont, A.

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