Anisotropic Properties of Quasi‐1D In4Se3: Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse by Vorobeva, Nataliia S., Lipatov, Alexey, Torres, Angel, Dai, Jun, Abourahma, Jehad, Le, Duy, Dhingra, Archit, Gilbert, Simeon J., Galiy, Pavlo V., Nenchuk, Taras M., Muratov, Dmitry S., Rahman, Talat S., Zeng, Xiao Cheng, Dowben, Peter A., Sinitskii, Alexander

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Indium segregation to the selvedge of In4Se3 (001) by Dhingra, Archit, Marzouk, Zoe G., Mishra, Esha, Galiy, Pavlo V., Nenchuk, Taras M., Dowben, Peter A.

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Surface termination and Schottky-barrier formation of In4Se3(001) by Dhingra, Archit, Galiy, Pavlo V, Wang, Lu, Vorobeva, Nataliia S, Lipatov, Alexey, Torres, Angel, Nenchuk, Taras M, Gilbert, Simeon J, Sinitskii, Alexander, Yost, Andrew J, Mei, Wai-Ning, Fukutani, Keisuke, Chen, Jia-Shiang, Dowben, Peter A

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Corrigendum to “Indium segregation to the selvedge of In4Se3 (001)” [Physica B: Phys. Condens. Matter 593 (2020) 412208] by Dhingra, Archit, Marzouk, Zoe G., Mishra, Esha, Galiy, Pavlo V., Nenchuk, Taras M., Dowben, Peter A.

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Anisotropic Properties of Quasi‐1D In 4 Se 3 : Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse by Vorobeva, Nataliia S., Lipatov, Alexey, Torres, Angel, Dai, Jun, Abourahma, Jehad, Le, Duy, Dhingra, Archit, Gilbert, Simeon J., Galiy, Pavlo V., Nenchuk, Taras M., Muratov, Dmitry S., Rahman, Talat S., Zeng, Xiao Cheng, Dowben, Peter A., Sinitskii, Alexander

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Corrigendum: Surface termination and Schottky-barrier formation of In 4 Se 3 (001) (2020 Semicond. Sci. Technol. 35 065009) by Dhingra, Archit, Galiy, Pavlo V, Wang, Lu, Vorobeva, Nataliia S, Lipatov, Alexey, Torres, Angel, Nenchuk, Taras M, Gilbert, Simeon J, Sinitskii, Alexander, Yost, Andrew J, Mei, Wai-Ning, Fukutani, Keisuke, Chen, Jia-Shiang, Dowben, Peter A

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Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol. 35 065009) by Dhingra, Archit, Galiy, Pavlo V, Wang, Lu, Vorobeva, Nataliia S, Lipatov, Alexey, Torres, Angel, Nenchuk, Taras M, Gilbert, Simeon J, Sinitskii, Alexander, Yost, Andrew J, Mei, Wai-Ning, Fukutani, Keisuke, Chen, Jia-Shiang, Dowben, Peter A

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Surface termination and Schottky-barrier formation of In 4 Se 3 (001) by Dhingra, Archit, Galiy, Pavlo V, Wang, Lu, Vorobeva, Nataliia S, Lipatov, Alexey, Torres, Angel, Nenchuk, Taras M, Gilbert, Simeon J, Sinitskii, Alexander, Yost, Andrew J, Mei, Wai-Ning, Fukutani, Keisuke, Chen, Jia-Shiang, Dowben, Peter A

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High-Resolution Angle-Resolved Photoemission Study of Quasi-One-Dimensional Semiconductor In 4 Se 3 by Fukutani, Keisuke, Miyata, Yasunari, Matsuzaki, Idea, Galiy, Pavlo V., Dowben, Peter A., Sato, Takafumi, Takahashi, Takashi

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Surface Structure and Nature of the Thin Film Coatings on the Surface of Porous Silicon by Galiy, Pavlo V., Musyanovych, Anna V., Nenchuk, Taras M.

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Anisotropy of the electron spectra of the cleavage surface (100) of layered In4Se3 crystals by GALIY, Pavlo V., NENCHUK, Taras M., DVERIY, Ostap R., LOSOVYJ, Yaroslav B.

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