AlN growth on sapphire substrate by ammonia MBE by Mansurov, V.G., Nikitin, A.Yu, Galitsyn, Yu.G., Svitasheva, S.N., Zhuravlev, K.S., Osvath, Z., Dobos, L., Horvath, Z.E., Pecz, B.

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Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1) by Milakhin, D.S., Malin, T.V., Mansurov, V.G., Galitsyn, Yu.G., Kozhukhov, A.S., Utkin, D.E., Zhuravlev, K.S.

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique by Malin, T.V., Mansurov, V.G., Galitsyn, Yu.G., Milakhin, D.S., Protasov, D.Yu, Ber, B.Ya, Kazantsev, D.Yu, Ratnikov, V.V., Shcheglov, M.P., Smirnov, A.N., Davydov, V.Yu, Zhuravlev, K.S.

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Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate by Lyamkina, A.A., Dmitriev, D.V., Galitsyn, Yu.G., Moshchenko, S.P., Toropov, A.I.

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Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide by Lyamkina, A.A., Dmitriev, D.V., Moshchenko, S.P., Galitsyn, Yu.G., Toropov, A.I.

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Role of ionic defects in photolysis of lithium hydride by Mikhailov, Yu.I., Brosalin, A.B., Galitsyn, Yu.G.

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