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Comparison of latchup immunity for silicided source/drain at different n super(+) implant energy
by
Leong, Kam-Chew
,
Liu, Po-Ching
,
Yeo, Kiat Seng
,
Gan, Chock-Hing
,
Qian, Gang
,
Lee, Yong-Meng
,
Chan, Lap
Published in
Microelectronics and reliability
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Comparison of latchup immunity for silicided source/drain at different n + implant energy
by
Leong, Kam-Chew
,
Liu, Po-Ching
,
Yeo, Kiat Seng
,
Gan, Chock-Hing
,
Qian, Gang
,
Lee, Yong-Meng
,
Chan, Lap
Published in
Microelectronics and reliability
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Comparison of latchup immunity for silicided source/drain at different n+ implant energy
by
Leong Kam Chew
,
Liu Po Chen
,
Gan Chock Hing
,
Qian Gang
,
Lee Yong Meng
,
Lap Chan
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300-Nanometer-Bereich
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Bipolar Transistors
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Implants
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Integrierte Schaltung
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Ionenimplantation
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Komplementäre Mos-Schaltung
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Kontaktwiderstand
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Metallisieren
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