Search Results - Garci-Loureiro, A.

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    3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

    3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs by Seoane, N., Aldegunde, M., Garcı´a-Loureiro, A., Valin, R., Kalna, K.

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  2. 2
    Efficient 3D Drift - Diffusion simulations of Implant Free Heterostructure Devices

    Efficient 3D Drift - Diffusion simulations of Implant Free Heterostructure Devices by Seoane, N., Garci-Loureiro, A., Aldegunde, M., Kalna, K., Asenov, A.

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