Noise Spectroscopy of Gas Sensors by Aroutiounian, V.M., Mkhitaryan, Z.H., Shatveryan, A.A., Gasparyan, F.V., Ghulinyan, M.Zh, Pavesi, L., Kish, L.B., Granqvist, C.-G.

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Phonon mechanism of mobility equilibrium fluctuation and properties of 1/ f-noise by Melkonyan, S.V., Aroutiounian, V.M., Gasparyan, F.V., Asriyan, H.V.

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Peculiarities of electron distribution function's fluctuations damping in homogeneous semiconductors by Melkonyan, S.V., Aroutiounian, V.M., Gasparyan, F.V., Korman, C.E.

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Low-frequency noise in non-homogeneously doped semiconductor by Asriyan, H.V., Gasparyan, F.V., Aroutiounian, V.M., Melkonyan, S.V., Soukiassian, P.

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Thermoelectric coefficient of the non-homogeneously doped p–n junctions made on Si and Pb 0.8Sn 0.2Te by Gasparyan, F.V., Aroutiounian, V.M., Abrahamian, Yu.A., Vahanian, A.I.

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Thermoelectric coefficient of the non-homogeneously doped p–n junctions made on Si and Pb0.8Sn0.2Te by Gasparyan, F.V., Aroutiounian, V.M., Abrahamian, Yu.A., Vahanian, A.I.

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Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels by Buniatyan, V.V., Gasparyan, F.V., Aroutiounian, V.V., Soukiassian, P.

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Some structures for cascade solar cells by Abrahamyan, Yu.A., Vahanyan, A.I., Vagarshakian, V.A., Gasparyan, F.V., Karamyan, G.G., Sarkisian, A.G., Stafeev, V.I.

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Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide by Asriyan, H.V., Gasparyan, F.V., Aroutiounian, V.M., Soukiassian, P.

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Theory of [formula omitted] noise in medium and far infrared photodetectors by Arutyunyan, V.M., Gasparyan, F.V., Melkonyan, S.V.

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Phenomena in silicon photodiodes doped with Zn and S by Harutyunyan, V.M., Adamyan, Z.N., Barseghyan, R.S., Gasparyan, F.V., Azaryan, M.H., Semerdjian, B.O., Mkhitaryan, Z.H., Melkonyan, S.V.

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