Search Results - Gavoshani, Amir

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  1. 1
    Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

    Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage by Gavoshani, Amir, Orouji, Ali A.

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  2. 2
    A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance

    A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance by Gavoshani, Amir, Orouji, Ali A., Abbasi, Abdollah

    Published in SILICON
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  3. 3
    Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide

    Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide by Gavoshani, Amir, Orouji, Ali A.

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  4. 4
    A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature

    A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature by Gavoshani, Amir, Orouji, Ali A.

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  5. 5
    A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells

    A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells by Gavoshani, Amir, Dehghan, Mostafa, Orouji, Ali A.

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