Search Results - Gebreselasie, E. G.

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  1. 1
    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications by Joseph, A J, Gillis, J D, Doherty, M, Lindgren, P J, Previti-Kelly, R A, Malladi, R M, Wang, P-C, Erturk, M, Ding, H, Gebreselasie, E G, McPartlin, M J, Dunn, J

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  2. 2
    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications: 3D chip technology

    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications: 3D chip technology by JOSEPH, A. J, GILLIS, J. D, MCPARTLIN, M. J, DUNN, J, DOHERTY, M, LINDGREN, P. J, PREVITI-KELLY, R. A, MALLADI, R. M, WANG, P.-C, ERTURK, M, DING, H, GEBRESELASIE, E. G

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  3. 3
    Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium BiCMOS Technologies

    Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium BiCMOS Technologies by Gebreselasie, E.G., Voldman, S.H., He, Z. X., Coolbaugh, D., Rassel, R.M., Kirihata, T., Paganini, A., Cox, C.G., Mongeon, S.A., St. Onge, S.A., Dunn, J.S., Halbach, R.E., Lukaitis, J.M.

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  4. 4
    Diode protection of GMR sensors

    Diode protection of GMR sensors by Iben, I. E. T., Gebreselasie, E. G., Loiseau, A., Gauthier, R.

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