Search Results - Gejo, Ryohei

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  1. 1
    High switching speed trench diode for 1200V RC-IGBT based on the concept of Schottky Controlled injection (SC)

    High switching speed trench diode for 1200V RC-IGBT based on the concept of Schottky Controlled injection (SC) by Gejo, Ryohei, Ogura, Tsuneo, Misu, Shinichiro, Maeda, Yosuke, Matsuoka, Yuma, Yasuhara, Norio, Nakamura, Kazutoshi

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  2. 2
    Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure

    Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure by Gejo, Ryohei, Kawakami, Akiyo, Hayase, Shigeaki

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  3. 3
    Effect of Thermal Convection on Liquid Phase Epitaxy of GaN by Na Flux Method

    Effect of Thermal Convection on Liquid Phase Epitaxy of GaN by Na Flux Method by Gejo, Ryohei, Kawamura, Fumio, Kawahara, Minoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

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  4. 4
    Improvement of Q rr –I DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side

    Improvement of Q rr –I DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side by Kobayashi, Yusuke, Nishiwaki, Tatsuya, Goryu, Akihiro, Kachi, Tsuyoshi, Gejo, Ryohei, Gangi, Hiro, Inokuchi, Tomoaki, Takao, Kazuto

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  5. 5
    Improvement of Qrr–IDSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side

    Improvement of Qrr–IDSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side by Kobayashi, Yusuke, Nishiwaki, Tatsuya, Goryu, Akihiro, Kachi, Tsuyoshi, Gejo, Ryohei, Gangi, Hiro, Inokuchi, Tomoaki, Takao, Kazuto

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  6. 6
    Reducing turn-Off loss by suppressing Back-Side parasitic npn Transistor in Single-Back and Double-Front Gate-Controlled IGBT

    Reducing turn-Off loss by suppressing Back-Side parasitic npn Transistor in Single-Back and Double-Front Gate-Controlled IGBT by Kobayashi, Yusuke, Fukui, Munetoshi, Matsudai, Tomoko, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Sakano, Tatsunori, Yamamoto, Takato, Inokuchi, Tomoaki, Gejo, Ryohei, Kobayashi, Kenya, Takao, Kazuto, Hiramoto, Toshiro

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  7. 7
    Single-Back and Double-Front Gate-Controlled IGBT for Achieving Low Turn-Off Loss

    Single-Back and Double-Front Gate-Controlled IGBT for Achieving Low Turn-Off Loss by Kobayashi, Yusuke, Fukui, Munetoshi, Matsudai, Tomoko, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Gejo, Ryohei, Sakano, Tatsunori, Kato, Takahiro, Inokuchi, Tomoaki, Takao, Kazuto, Hiramoto, Toshiro

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  8. 8
    Ideal carrier profile control for high-speed switching of 1200 V IGBTs

    Ideal carrier profile control for high-speed switching of 1200 V IGBTs by Gejo, Ryohei, Ogura, Tsuneo, Misu, Shinichiro, Nakamura, Kazutoshi, Yasuhara, Norio, Takano, Akio

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