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Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)
by
Genath, H.
,
Schubert, M. A.
,
Yamtomo, H. L.
,
Krügener, J.
,
Osten, H. J.
Published in
Journal of applied physics
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Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates
by
Genath, Hannah
,
Norberg, Jenny
,
Wolpensinger, Bettina
,
Osten, H. Jörg
Published in
Thin solid films
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Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy
by
Genath, Hannah
,
Schmidt, Jan
,
Osten, H. Jörg
Published in
Journal of crystal growth
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Journal Title
Journal Of Applied Physics
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1
Journal Of Crystal Growth
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Thin Solid Films
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Subjects
Physical Sciences
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3
Physics
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3
Physics, Applied
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Science & Technology
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3
Epitaxial Growth
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2
Germanium
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2
Materials Science
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Materials Science, Multidisciplinary
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Silicon Germanides
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2
Silicon Substrates
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Technology
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Thickness
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A1. Virtual Substrate
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A1. X-Ray Diffraction
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1
A3. Carbon-Mediated Epitaxy
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Atomic Force Microscopy
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B1. Sige
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B1. Silicon Germanium
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Carbon
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Crystallography
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Elsevier Sciencedirect Journals
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Elsevier
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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American Institute Of Physics:jisc Collections:transitional Journals Agreement 2021-23 (Reading List)
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Aip Open Access Journals
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Aip Digital Archive
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American Institute Of Physics (Aip) Publications
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