Search Results - Geng, Kui-Wei

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  1. 1
    Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

    Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors... by Cai, Jing, Ruo‐He Yao, Kui‐Wei Geng

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  2. 2
    A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

    A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors by Cai, Jing, Yao, Ruo-He, Liu, Yu-Rong, Geng, Kui-Wei

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  3. 3
    Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

    Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT by Cai, Jing, Yao, Ruo-He, Liu, Yu-Rong, Geng, Kui-Wei

    Published in AIP advances
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  4. 4
    An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

    An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions by Zhong, Chun-Liang, Yao, Ruo-He, Geng, Kui-Wei

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  5. 5
    Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

    Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric by Li, Hong-cheng, Liu, Yu-rong, Geng, Kui-wei, Wu, Wei-jing, Yao, Ruo-he, Lai, Pui-to

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  6. 6
    An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

    An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells by Zhong, Chun-liang, Geng, Kui-wei, Luo, Lan-e, Yang, Di-wu

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  7. 7
    Photovoltage analysis of a heterojunction solar cell

    Photovoltage analysis of a heterojunction solar cell by 熊超 姚若河 耿魁伟

    Published in Chinese physics B
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  8. 8
    Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

    Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors by Wang, Li, Liu, Yuan, Geng, Kui-Wei, Chen, Ya-Yi, En, Yun-Fei

    Published in Chinese physics B
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  9. 9
    Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K

    Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K by Liu, Yuan, Wang, Li, Cai, Shu-Ting, Chen, Ya-Yi, Chen, Rongsheng, Xiong, Xiao-Ming, Geng, Kui-Wei

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  10. 10
    Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al 0.3 Ga 0.7 N/GaN/i‐Al x Ga 1− x N/GaN High‐Electron‐Mobility Transistors

    Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al 0.3 Ga 0.7 N/GaN/i‐Al x Ga 1− x N/GaN High‐Electron‐Mobility Transistors... by Cai, Jing, Yao, Ruo‐He, Geng, Kui‐Wei

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  11. 11
    A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al x Ga 1− x N/GaN/Al y Ga 1− y N/GaN High‐Electron‐Mobility Transistors

    A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al x Ga 1− x N/GaN/Al y Ga 1− y N/GaN High‐Electron‐Mobility Transistors by Cai, Jing, Yao, Ruo-He, Liu, Yu-Rong, Geng, Kui-Wei

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  12. 12
    Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K Supported by the National Natural Science Foundation of China under Grant No 61574048, the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172, the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006, and the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6

    Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K Supported by the National Natural Science Foundation of China und... by Liu, Yuan, Wang, Li, Cai, Shu-Ting, Chen, Ya-Yi, Chen, Rongsheng, Xiong, Xiao-Ming, Geng, Kui-Wei

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  13. 13
    Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistorsProject supported by the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences (Grant No. KLSDTJJ2018-6), the National Natural Science Foundation of China (Grant No. 61574048), the Science and Technology Research Project of Guangdong Province, China (Grant No. 2015B090912002), and the Pearl River S & T Nova Program of Guan

    Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistorsProject supported by the Opening Fund o... by Wang, Li, Liu, Yuan, Geng, Kui-Wei, Chen, Ya-Yi, En, Yun-Fei

    Published in Chinese physics B
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