X-ray and γ-ray detectors based on GaAs epitaxial structures by Ayzenshtat, G.I., Germogenov, V.P., Guschin, S.M., Okaevich, L.S., Shmakov, O.G., Tolbanov, O.P., Vorobiev, A.P.

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GaAs structures for X-ray imaging detectors by Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors by Budnitsky, D.L., Germogenov, V.P., Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.

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Study of perfection of layers of AlGaSb(AS) solid solution by Germogenov, V. P., Ivleva, O. M., Otman, Ya. I., piktetova, L. E.

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