Performance-optimized gate-first 22-nm SOI technology with embedded DRAM by Freeman, G., Chang, P., Engbrecht, E. R., Giewont, K. J., Hilscher, D. F., Lagus, M., McArdle, T. J., Morgenfeld, B., Narasimha, S., Norum, J. P., Nummy, K. A., Parries, P., Wang, G., Winslow, J. K., Agnello, P., Malik, R.

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