Search Results - Giguerre, L.

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  1. 1
    High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

    High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET by Aniel, F, Enciso-Aguilar, M, Giguerre, L, Crozat, P, Adde, R, Mack, T, Seiler, U, Hackbarth, Th, Herzog, H.J, König, U, Raynor, B

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  2. 2
    Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

    Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance by Hackbarth, T., Herzog, H.-J., Hieber, K.-H., König, U., Mantl, S., Holländer, B., Lenk, St, von Känel, H., Enciso, M., Aniel, F., Giguerre, L.

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  3. 3
    Microwave performances of silicon heterostructure-FETs

    Microwave performances of silicon heterostructure-FETs by Aniel, F., Enciso, M., Richard, S., Giguerre, L., Zerounian, N., Crozat, P., Adde, R., Hackbarth, T., Herzog, J-H., König, U.

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  4. 4
    Self heating in InP DHBT technology for 40Gbit/s ICs

    Self heating in InP DHBT technology for 40Gbit/s ICs by ABBOUN, M, ZEROUNIAN, N, DUBOIS, A, GIGUERRE, L, ANIEL, F, ADDE, R, BLAYAC, S, RIET, M, KONCZYKOWSKA, A

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  5. 5
    Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET]

    Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET] by Rideau, D., Dray, A., Gilibert, F., Agut, F., Giguerre, L., Gouget, G., Minondo, M., Juge, A.

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  6. 6
    High performance 100 nm T-gate strained Si/Si 0.6Ge 0.4 n-MODFET

    High performance 100 nm T-gate strained Si/Si 0.6Ge 0.4 n-MODFET by Aniel, F, Enciso-Aguilar, M, Giguerre, L, Crozat, P, Adde, R, Mack, T, Seiler, U, Hackbarth, Th, Herzog, H.J, König, U, Raynor, B

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  7. 7
    Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

    Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs by Enciso, M., Fox, A., Aniel, F., Crozat, P., Giguerre, L., Adde, R., Zeuner, M., Hock, G.

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  8. 8
    Self-heating effects on strained Si/SiGe n-HFETs

    Self-heating effects on strained Si/SiGe n-HFETs by Encisco, M., Aniel, F., Giguerre, L., Hackbarth, T., Herzog, H., Konig, U., Hollander, B., Mantl, S.

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  9. 9
    Self Heating in InP DHBT Technology for 40 Gb/s ICs

    Self Heating in InP DHBT Technology for 40 Gb/s ICs by Giguerre, L., Abboun, M., Aniel, F., Zerounian, N., Dubois, A., Adde, R., Blayac, S., Riet, M., Konczykowska, A.

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  10. 10
    High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET

    High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET by Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, Th, Raynor, B.

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  11. 11
    SiGe hetero FETs on silicon at cryogenic temperature

    SiGe hetero FETs on silicon at cryogenic temperature by Aniel, F., Enciso-Aguilar, M., Zerounian, N., Giguerre, L., Crozat, P., Adde, R., Zeuner, M., Hock, G., Hackbarth, T., Herzog, H.-J., Konig, U.

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  12. 12
    Antibiotic prophylaxis during clean neurosurgery: a large, multicenter study using cefuroxime

    Antibiotic prophylaxis during clean neurosurgery: a large, multicenter study using cefuroxime by Holloway, Kathryn L., Smith, Ken W., Wilberger, James E., Jemsek, Joseph G., Giguere, Gregory C., Collins, Jeffrey J.

    Published in Clinical therapeutics
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