Search Results - Gil-Heyun Choi

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  1. 1
    Effect of pre-existing void in sub-30nm Cu interconnect reliability

    Effect of pre-existing void in sub-30nm Cu interconnect reliability by Zungsun Choi, Tsukasa, M, Jong Myeong Lee, Gil-Heyun Choi, Siyoung Choi, Joo-Tae Moon

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  2. 2
    Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method

    Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method by Kim, Ju Youn, Choi, Gil Heyun, Kim, Young Do, Kim, Yangdo, Jeon, Hyeongtag

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  3. 3
    Electromigration tests for critical stress and failure mechanism evaluation in Cu/W via/Al hybrid interconnect

    Electromigration tests for critical stress and failure mechanism evaluation in Cu/W via/Al hybrid interconnect by Zungsun Choi, Byung-Lyul Park, Jong Myeong Lee, Gil-Heyun Choi, Hyeon-Deok Lee, Joo-Tae Moon

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  4. 4
    Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance

    Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance by Kim, Hyun-Su, Yun, Jong-Ho, Moon, Kwang-Jin, Sohn, Woong-Hee, Jung, Sug-Woo, Jung, Eun-Ji, Kim, Se-Hoon, Bae, Nam-Jin, Choi, Gil-Heyun, Kim, Sung-Tae, Chung, U-In, Moon, Joo-Tae, Ryu, Byung-Il

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  5. 5
    Formation of highly reliable Cu/low-k interconnects by using CVD Co barrier in dual damascene structures

    Formation of highly reliable Cu/low-k interconnects by using CVD Co barrier in dual damascene structures by Hye Kyung Jung, Hyun-Bae Lee, Tsukasa, Matsuda, Jung, Eunji, Jong-Ho Yun, Jong Myeong Lee, Gil-Heyun Choi, Siyoung Choi, Chilhee Chung

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  6. 6
    Investigation of Ni/Co bilayer salicidation process for sub-40 nm gate technology

    Investigation of Ni/Co bilayer salicidation process for sub-40 nm gate technology by Jung, Eun Ji, Jung, Sug-Woo, Kim, Hyun-Su, Yun, Jong-Ho, Cheong, Seong Hwee, Kim, Byung Hee, Choi, Gil Heyun, Kim, Sung Tae, Chung, U-In, Moon, Joo Tae, Ryu, Byung Il

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  7. 7
    Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology

    Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology by Jung, Eun Ji, Jung, Sug-Woo, Kim, Hyun-Su, Yun, Jong-Ho, Cheong, Seong Hwee, Kim, Byung Hee, Choi, Gil Heyun, Kim, Sung Tae, Chung, U-In, Moon, Joo Tae, Ryu, Byung Il

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  8. 8
    Formation of halo in Sb-InSb and Sn-Bi eutectic alloy systems

    Formation of halo in Sb-InSb and Sn-Bi eutectic alloy systems by Suk, Myung-Jin, Choi, Gil-Heyun, Moon, In-Hyung

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  9. 9
    Correlation between the coupled region boundary and interdendritic eutectic composition

    Correlation between the coupled region boundary and interdendritic eutectic composition by Suk, Myung-Jin, Choi, Gil-Heyun, Moon, In-Hyung

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  10. 10
    Al-Reflow Process with a “Cap-Clamp” for Sub-Micron Contact Holes

    Al-Reflow Process with a “Cap-Clamp” for Sub-Micron Contact Holes by Choi, Gil-Heyun, Lee, Sang-In, Park, Chang-Soo, Park, In-Seon, Ahn, Sung-Tae, Kim, Yong-Kil, Reynolds, Reese

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  11. 11
    Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor

    Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor by Yun, Ju Young, Kim, Byung Hee, Seo, Jung Hun, Lee, Jong Myeong, Kang, Sang Bom, Choi, Gil Heyun, Chung, U In, Moon, Joo Tae

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  12. 12
    Nonvolatile MOSFET memory based on high density WN nanocrystal layer fabricated by novel PNL (pulsed nucleation layer) method

    Nonvolatile MOSFET memory based on high density WN nanocrystal layer fabricated by novel PNL (pulsed nucleation layer) method by Seung-Hyun Lim, Kyong Hee Joo, Jin-Ho Park, Sang-Woo Lee, Woong Hee Sohn, Changwon Lee, Gil Heyun Choi, In-Seok Yeo, U-In Chung, Joo Tae Moon, Byung-Il Ryu

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  13. 13
    Epitaxial growth technology for optical interconnect based on bulk-Si platform

    Epitaxial growth technology for optical interconnect based on bulk-Si platform by JoongHan Shin, BongJin Kuh, JongSung Lim, BeomSeok Kim, EunHa Lee, DongJae Shin, KwanSik Cho, BeomSuk Lee, KyoungHo Ha, HanMei Choi, Gil-Heyun Choi, HoKyu Kang, EunSeung Jung

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  14. 14
    Determination of microstructural anisotropy in Sb-InSb eutectic by electrical resistivity measurement

    Determination of microstructural anisotropy in Sb-InSb eutectic by electrical resistivity measurement by Suk, Myung-Jin, Choi, Gil-Heyun, Moon, In-Hyung

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  15. 15
    Trap Density Modulation for IO FinFET NBTI Improvement

    Trap Density Modulation for IO FinFET NBTI Improvement by Ranjan, Rakesh, LaRow, Charles B., Lee, Ki-Don, Kang, Minhyo, Perepa, Pavitra R., Rahman, M. Shahriar, Lee, Bong Ki, Moreau, David, Cariss-Daniels, Carolyn, Basford, Timothy, Callahan, Colby, Nguyen, Maihan, Choi, Gil Heyun, Sagong, Hyunchul, Rhee, HwaSung

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  16. 16
    Robust porous SiOCH (k=2.5) for 28nm and beyond technology node

    Robust porous SiOCH (k=2.5) for 28nm and beyond technology node by Janghee Lee, Sang Hoon Ahn, Insun Jung, Kyu-Hee Han, Gyeonghee Kim, Sang-Don Nam, Woo Sung Jeon, Byeong Hee Kim, Gil Heyun Choi, Siyoung Choi, Ho-Kyu Kang, Chilhee Chung

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  17. 17
    Highly reliable interconnect technology featuring 90 nm DRAM integration

    Highly reliable interconnect technology featuring 90 nm DRAM integration by U-In Chung, Siyoung Choi, Gil-Heyun Choi

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  18. 18
    Low damage in situ contact cleaning method by a highly dense and directional ECR plasma

    Low damage in situ contact cleaning method by a highly dense and directional ECR plasma by PARK, I. S, YOON, M, LEE, H. D, PARK, C. S, WEE, Y. J, CHOI, G. H, OH, K. Y, LEE, S. I, LEE, M. Y

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  19. 19
    Metallization in Memory Device: Present & Future

    Metallization in Memory Device: Present & Future by Sang woo Lee, Gil Heyun Choi, Sung Tae Kim, U-In Chung, Joo Tae Moon

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  20. 20
    Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization

    Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization by Jong Won Hong, Kyung In Choi, You Kyoung Lee, Sung Gun Park, Sang Woo Lee, Jong Myeong Lee, Sang Bom Kang, Gil Heyun Choi, Sung Tae Kim, U-In Chung, Joo Tae Moon

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