Search Results - Giziewicz, Wojciech

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  1. 1
    High performance, waveguide integrated Ge photodetectors

    High performance, waveguide integrated Ge photodetectors by Ahn, Donghwan, Hong, Ching-Yin, Liu, Jifeng, Giziewicz, Wojciech, Beals, Mark, Kimerling, Lionel C, Michel, Jurgen, Chen, Jian, Kärtner, Franz X

    Published in Optics express
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  2. 2
    High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

    High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform by Liu, Jifeng, Michel, Jurgen, Giziewicz, Wojciech, Pan, Dong, Wada, Kazumi, Cannon, Douglas D., Jongthammanurak, Samerkhae, Danielson, David T., Kimerling, Lionel C., Chen, Jian, Ilday, F. Ömer, Kärtner, Franz X., Yasaitis, John

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  3. 3
    Optoelectronic integration using aligned metal-to-semiconductor bonding

    Optoelectronic integration using aligned metal-to-semiconductor bonding by Giziewicz, Wojciech P., Fonstad, Clifton G.

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  4. 4
    High-performance, tensile-strained Ge p - i - n photodetectorson a Si platform

    High-performance, tensile-strained Ge p - i - n photodetectorson a Si platform by Liu, Jifeng, Michel, Jurgen, Giziewicz, Wojciech, Pan, Dong, Wada, Kazumi, Cannon, Douglas D., Jongthammanurak, Samerkhae, Danielson, David T., Kimerling, Lionel C., Chen, Jian, Ilday, F. Ömer, Kärtner, Franz X., Yasaitis, John

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  5. 5
    High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

    High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process by GIZIEWICZ, Wojciech P, FONSTAD, Clifton G, PRASAD, Sheila

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  6. 6
    Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

    Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process by Giziewicz, W., Prasad, S., Fonstad, C.G.

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  7. 7
    High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

    High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process by GIZIEWICZ, WOJCIECH P., FONSTAD, CLIFTON G., PRASAD, SHEILA

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  8. 8
    A 20GHz, tensile strained ge photodetector on si platform with broad detection spectrum for optical communications and on-chip applications

    A 20GHz, tensile strained ge photodetector on si platform with broad detection spectrum for optical communications and on-chip applications by JIFENG LIU, MICHEL, Jurgen, GIZIEWICZ, Wojciech, CANNON, Douglas D, JONGTHAMMANURAK, Samerkhae, DANIELSON, David T, DONG PAN, YASAITI, John, WADA, Kazumi, KIMERLING, Lionel C

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