Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures by Goldman, E. I., Levashov, S. A., Naryshkina, V. G., Chucheva, G. V.

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Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide by Goldman, E. I., Levashova, A. I., Levashov, S. A., Chucheva, G. V.

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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characterist... by Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., Chucheva, G. V.

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Direct tunneling of electrons in Al-[n.sup.+]-Si-Si[O.sub.2]-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carrier... by Goldman, E.I, Gulyaev, Yu. V, Zhdan, A.G, Chucheva, G.V

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim... by Goldman, E.I., Kukharskaya, N.F., Zhdan, A.G.

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A theoretical interpretation of exploding pusher laser fusion experiments by Goldman, E.B, Delettrez, J.A, Thorsos, E.I

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