Search Results - Golovina, V.V.

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  1. 1
    Predicting Deformation and Relaxation Processes in Uniaxially Oriented Polymers

    Predicting Deformation and Relaxation Processes in Uniaxially Oriented Polymers by Golovina, V. V., Rymkevich, P. P., Makarov, A. G., Romanova, A. A.

    Published in Fibre chemistry
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  2. 2
    The study of Kansk-Achinsk lignite bioconversion products

    The study of Kansk-Achinsk lignite bioconversion products by Golovin, Yu.G., Shchipko, M.L., Kuznetsov, B.N., Golovina, V.V., Eremina, A.O.

    Published in Fuel (Guildford)
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  3. 3
    Tb-dependent phase transitions in Fe-Ga functional alloys

    Tb-dependent phase transitions in Fe-Ga functional alloys by Emdadi, A., Palacheva, V.V., Balagurov, А.M., Bobrikov, I.A., Cheverikin, V.V., Cifre, J., Golovin, I.S.

    Published in Intermetallics
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  4. 4
    Cluster Development Based on Competitive Specialization of Regions

    Cluster Development Based on Competitive Specialization of Regions by Kolmakov, V.V., Polyakova, A.G., Karpova, S.V., Golovina, A.N.

    Published in Ekonomika regiona
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  5. 5
    Phase transition induced anelasticity in Fe–Ga alloys with 25 and 27%Ga

    Phase transition induced anelasticity in Fe–Ga alloys with 25 and 27%Ga by Golovin, I.S., Balagurov, А.M., Bobrikov, I.A., Palacheva, V.V., Cifre, J.

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  6. 6
    Defect driven ferroelectricity and magnetism in nanocrystalline KTaO3

    Defect driven ferroelectricity and magnetism in nanocrystalline KTaO3 by GOLOVINA, I. S, KOLESNIK, S. P, BRYKSA, V. P, STRELCHUK, V. V, YANCHUK, I. B, GEIFMAN, I. N, KHAINAKOV, S. A, SVECHNIKOV, S. V, MOROZOVSKA, A. N

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  7. 7
    Defect driven ferroelectricity and magnetism in nanocrystalline KTaO 3

    Defect driven ferroelectricity and magnetism in nanocrystalline KTaO 3 by Golovina, I.S., Kolesnik, S.P., Bryksa, V.P., Strelchuk, V.V., Yanchuk, I.B., Geifman, I.N., Khainakov, S.A., Svechnikov, S.V., Morozovska, A.N.

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  8. 8
    Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 °C

    Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 °C by Voronkova, G.I., Batunina, A.V., Voronkov, V.V., Falster, R., Golovina, V.N., Guliaeva, A.S., Tiurina, N.B.

    Published in Thin solid films
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  9. 9
    Impurity clouds in silicon and germanium

    Impurity clouds in silicon and germanium by Voronkov, V.V., Voronkova, G.I., Golovina, V.N., Zubov, B.V., Kalinushkin, V.P., Murina, T.M., Prokhorov, A.M.

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