Band-like electron transport in 2D quantum dot periodic lattices: the effect of realistic size distributions by Skibinsky-Gitlin, E. S, Rodríguez-Bolívar, S, Califano, M, Gómez-Campos, F. M

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Intraband photon absorption in edge-defined nanowire superlattices for optoelectronic applications by Gómez-Campos, F. M., Rodríguez-Bolívar, S., Luque-Rodríguez, A., López-Villanueva, J. A., Carceller, J. E.

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A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors by Jimenez Tejada, Juan Antonio, Rodriguez, Abraham Luque, Godoy, Andres, Lopez Villanueva, Juan A., Gomez-Campos, Francisco M., Rodriguez-Bolivar, Salvador

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Characterization of organic thin film transistors with hysteresis and contact effects by Awawdeh, K.M., Jiménez Tejada, J.A., López Varo, P., López Villanueva, J.A., Gómez Campos, F.M., Deen, M.J.

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An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs by Villena, M.A., González, M.B., Roldán, J.B., Campabadal, F., Jiménez-Molinos, F., Gómez-Campos, F.M., Suñé, J.

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Computational improvement of the normalized plane-wave method and its applications in quantum dot studies by Gómez-Campos, F.M., Rodríguez-Bolívar, S., Carceller, J.E.

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Bandgap calculation in Si quantum dot arrays using a genetic algorithm by Gómez-Campos, F.M., Rodríguez-Bolívar, S., de Jong van Coevorden, C.M., Luque-Rodríguez, A., Lara-Bullejos, P., Carceller, J.E.

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Size-correction Technique for kp Simulation of Silicon Quantum Dots by Gomez-Campos, F.M., Rodriguez-Bolivar, S., Carceller, J.E.

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A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices by Gómez-Campos, F.M., Rodríguez-Bolívar, S., Jiménez-Tejada, J.A., Carceller, J.E.

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A Study on Band Nonparabolicity Effects in Nanostructures by Gomez-Campos, F.M., Rodriguez-Bolivar, S., Carceller, J.E.

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Effect of traps in the performance of Four Gate Transistors by Rodriguez, A.L., Tejada, J., Godoy, A., Villanueva, J., Gomez-Campos, F.M., Rodriguez-Bolivar, S.

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3D animations used for teaching by Gomez-Campos, F.M., Rodriguez-Bolivar, S., Luque-Rodriguez, A., Lopez-Villanueva, J.A., Jimenez-Tejada, J.A., Lara-Bullejos, P., Carceller, J.E.

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Improvement of the k.p Approach for Describing Silicon Quantum Dots by Rodriguez-Bolivar, S., Gomez-Campos, F.M., Luque-Rodriguez, A., Lopez-Villanueva, J.A., Jimenez-Tejada, J.A., Lara-Bullejos, P., Carceller, J.E.

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Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy by Tejada, J.A.J., Deen, M.J., Bullejos, P.L., Villanueva, J.A.L., Gomez-Campos, F.M., Rodriguez-Bolivar, S.

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Confinement in quantum wire periodic nanostructures by Rodriguez-Bolivar, S., Gomez-Campos, F.M., Luque-Rodriguez, A., Lopez-Villanueva, J.A., Carceller, J.E.

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Characterization of oxygen related defects in silicon p-n junctions by Tejada, J.A.J., Villanueva, J.A.L., Godoy, A., Gomez-Campos, F.M., Rodriguez-Bolivar, S., Carceller, J.E.

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Hole ionized impurity scattering in warped, non-parabolic and degenerate bands by Gomez-Campos, F.M., Rodriguez-Bolivar, S., Jimenez-Tejada, J.A., Carceller, J.E.

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