Search Results - Gonçalez Filho, Walter

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  1. 1
    Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

    Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability by Filho, Walter Gonçalez, Borga, Matteo, Geens, Karen, Khan, Md Arif, Cingu, Deepthi, Chatterjee, Urmimala, Vohra, Anurag, Decoutere, Stefaan, Bakeroot, Benoit

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  2. 2
    Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

    Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN by Filho, Walter Goncalez, Borga, Matteo, Geens, Karen, Khan, Md Arif, Cingu, Deepthi, Chatterjee, Urmimala, Decoutere, Stefaan, Knaepen, Werner, Kizir, Seda, Arnou, Panagiota, Bakeroot, Benoit

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  3. 3
    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing by Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan

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  4. 4
    Analog design with Line-TFET device experimental data: from device to circuit level

    Analog design with Line-TFET device experimental data: from device to circuit level by Gonçalez Filho, Walter, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine, Martino, Joao A, Agopian, Paula G D

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  5. 5
    Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

    Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis by de Lima Silva, Wenita, do Nascimento Tolêdo, Rodrigo, Gonçalez Filho, Walter, de Moraes Nogueira, Alexandro, Ghedini Der Agopian, Paula, Antonio Martino, Joao

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  6. 6
    Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

    Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data by do Nascimento Tolêdo, Rodrigo, de Lima Silva, Wenita, Gonçalez Filho, Walter, de Moraes Nogueira, Alexandro, Antonio Martino, Joao, Ghedini Der Agopian, Paula

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