Search Results - Gonchond, J.P.

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  1. 1
    UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45 nm node and below

    UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45 nm node and below by Chapelon, L.L., Vitiello, J., Gonchond, J.P., Barbier, D., Torres, J.

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  2. 2
    X-ray metrology for advanced silicon processes

    X-ray metrology for advanced silicon processes by Wyon, C., Gonchond, J.P., Delille, D., Michallet, A., Royer, J.C., Kwakman, L., Marthon, S.

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  3. 3
    In-line monitoring of advanced microelectronic processes using combined X-ray techniques

    In-line monitoring of advanced microelectronic processes using combined X-ray techniques by Wyon, C., Delille, D., Gonchond, J.P., Heider, F., Kwakman, L., Marthon, S., Mazor, I., Michallet, A., Muyard, D., Perino-Gallice, L., Royer, J.C., Tokar, A.

    Published in Thin solid films
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  4. 4
    UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45nm node and below

    UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45nm node and below by Chapelon, L.L., Vitiello, J., Gonchond, J.P., Barbier, D., Torres, J.

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  5. 5
    Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient

    Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient by Caubet, P., Blomberg, T., Benaboud, R., Wyon, C., Blanquet, E., Gonchond, J.P., Juhel, M., Bouvet, P., Gros-Jean, M., Michaelos, J., Richard, C., Iteprat, B.

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  6. 6
    Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

    Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures by Gallois-Garreignot, S., Chave, F., Gonchond, J.P., Gautheron, B., Fiori, V., Nelias, D.

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  7. 7
    3D Multi-Frequency MEMS Electromechanical Resonator Design

    3D Multi-Frequency MEMS Electromechanical Resonator Design by Casset, F., Durand, C., Dedieu, S., Carpentier, J.F., Gonchond, J.P., Ancey, P., Robert, P.

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  8. 8
    Effect of post-metallization annealing on W/Cr-metallized silicon junctions

    Effect of post-metallization annealing on W/Cr-metallized silicon junctions by Gonchond, J.P., Giordano, P., Oberlin, J.C., Paoli, M., Chantre, A.

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  9. 9
    Combined XRR and RS Measurements of Nickel Silicide Films

    Combined XRR and RS Measurements of Nickel Silicide Films by Gonchond, J.-P., Cacho, F., Wyon, C., Rolland, G., Braeckelmann, G., Kwakman, L.F.Tz, Tsach, Y., Agnihotri, D.K., Formica, J.P.

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  10. 10
    State-of-the-Art Characterization for 65 nm CMOS Processes and Beyond

    State-of-the-Art Characterization for 65 nm CMOS Processes and Beyond by Hopstaken, Marco, Juhel, Marc, Gonchond, Jean-Pierre, Kwakman, Laurens, Wyon, Christophe

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