Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide by Oberman, D.B., Lee, H., Götz, W.K., Harris, J.S.

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Relation between Structural Parameters and the Effective Electron-Hole Separation in InGaN/GaN Quantum Wells by Shapiro, N.A., Feick, H., Gardner, N.F., Götz, W.K., Waltereit, P., Speck, J.S., Weber, E.R.

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Effect of grown-in biaxial strain on deep level defects in Si1−C /Si epitaxial heterostructures by Singh, D.V., Mitchell, T.O., Hoyt, J.L., Gibbons, J.F., Johnson, N.M., Götz, W.K.

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Effect of grown-in biaxial strain on deep level defects in Si1−yCy/Si epitaxial heterostructures by Singh, D.V., Mitchell, T.O., Hoyt, J.L., Gibbons, J.F., Johnson, N.M., Götz, W.K.

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High-flux and high-efficiency nitride-based light-emitting devices by Gardner, N.F., Bhat, J., Collins, D., Cook, L., Craford, M.G., Fletcher, R.M., Grillot, P., Gotz, W.K., Kueper, M., Khare, R., Kim, A., Krames, M.R., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S.A., Subramanya, S., Trottier, T., Wierer, J.J.

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