Search Results - Goubara, Shin

  • Showing 1 - 5 results of 5
Refine Results
  1. 1
    Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN

    Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN by Matsubara, Tohoru, Sugimoto, Kohei, Goubara, Shin, Inomoto, Ryo, Okada, Narihito, Tadatomo, Kazuyuki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques

    Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques by Matsubara, Tohoru, Goubara, Shin, Yukizane, Kota, Inomoto, Ryo, Okada, Narihito, Tadatomo, Kazuyuki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  3. 3
    Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy

    Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy by Goubara, Shin, Matsubara, Tohoru, Yukizane, Kota, Arita, Naoki, Fujimoto, Satoru, Ezaki, Tatsuya, Inomoto, Ryo, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  4. 4
    Bulk GaN substrate with overall dislocation density on the order of 10^sup 5^/cm^sup 2^ fabricated by hydride vapor phase epitaxy

    Bulk GaN substrate with overall dislocation density on the order of 10^sup 5^/cm^sup 2^ fabricated by hydride vapor phase epitaxy by Goubara, Shin, Matsubara, Tohoru, Yukizane, Kota, Arita, Naoki, Fujimoto, Satoru, Ezaki, Tatsuya, Inomoto, Ryo, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki

    Get full text
    Article
    Save to List
    Saved in:
  5. 5
    Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques (Phys. Status Solidi B 8/2017)

    Visualization of dislocation behavior in HVPE‐grown GaN using facet controlling techniques (Phys. Status Solidi B 8/2017) by Matsubara, Tohoru, Goubara, Shin, Yukizane, Kota, Inomoto, Ryo, Okada, Narihito, Tadatomo, Kazuyuki

    Get full text
    Article
    Save to List
    Saved in:

Search Tools: