Special RF/microwave devices in Silicon-on-Glass Technology by Nanver, L.K., Schellevis, H., Scholtes, T., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L., Huang, C., Milosavljevic, S., Goudena, E.

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Design and fabrication of infrared detector arrays for satellite attitude control by van Herwaarden, A.W., van Herwaarden, F.G., Molenaar, S.A., Goudena, E.J.G., Laros, M., Sarro, P.M., Schot, C.A., van der Vlist, W., Blarre, L., Krebs, J.P.

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Optimization of fully-implanted NPNs for high-frequency operation by Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.

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DIMES-01, a baseline BIFET process for smart sensor experimentation by Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.

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Bipolar integrated Kelvin test structure for contact resistance measurement of self-aligned implantations by Nanver, L.K., Goudena, E.J.G., Slabbekoorn, J.

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Sub-500 deg C solid-phase epitaxy of ultra-abrupt p/sup %2B/-silicon elevated contacts and diodes by Civale, Y, Nanver, L K, Hadley, P, Goudena, E J G, Schellevis, H

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Sub-500 deg C solid-phase epitaxy of ultra-abrupt p+-silicon elevated contacts and diodes by Civale, Y, Nanver, L K, Hadley, P, Goudena, E J G, Schellevis, H

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Design considerations for integrated high-frequency p-channel JFETs by Nanver, L.K., Goudena, E.J.G.

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Characterization of tungsten deposited by GeH4 reduction of WF6, and its application as contact material to Si by VAN DER JEUGD, C. A, LEUSINK, G. J, OOSTERLAKEN, T. G. M, ALKEMADE, P. F. A, NANVER, L. K, GOUDENA, E. J. G, JANSSEN, G. C. A. M, RADELAAR, S

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High-speed, high-quality WEB NPN transistors with phosphorus emitters by Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.

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RF/microwave device fabrication in silicon-on-glass technology by Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.

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I–V characteristics of integrated n+pn− reachthrough diodes by Nanver, L.K., Goudena, E.J.G.

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High-Frequency SiGe HBT's with Implanted Emitters by Nanver, L.K., Goudena, E.J.G., Visser, C., van Zeijl, H.W., Slotboom, J.W.

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Characterization of tungsten deposited by GeH sub(4) reduction of WF sub(6), and its application as contact material to Si by van der Jeugd, C A, Leusink, G J, Oosterlaken, T G M, Alkemade, P F A, Nanver, L K, Goudena, E J G, Janssen, GCAM, Radelaar, S

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Characterization of Tungsten Deposited by GeH4 Reduction of  WF 6, and Its Application as Contact Material to Si by van der Jeugd, C. A., Leusink, G. J., Oosterlaken, T. G. M., Alkemade, P. F. A., Nanver, L. K., Goudena, E. J. G., Janssen, G. C. A. M., Radelaar, S.

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Silicon-on-glass technology for RF and microwave device fabrication by Nanver, Lis K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.

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Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AIN Cooling : THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING by NANVER, Lis K, SCHELLEVIS, Hugo, CONG HUANG, MILOSAVLJEVIC, Silvana, GOUDENA, Egbert J. G, SCHOLTES, Tom L. M, LA SPINA, Luigi, LORITO, Gianpaolo, SARUBBI, Francesco, GONDA, Viktor, POPADIC, Miloš, BUISMAN, Koen, DE VREEDE, Leo C. N

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