Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs by Zhan, Gao, Rampazzo, Fabiana, Santi, Carlo De, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Blanck, Herve, Grunenputt, Jan, Sommer, Daniel, Chen, Ding Yuan, Wen, Kai-Hsin, Chen, Jr-Tai, Zanoni, Enrico

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Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance by Chen, Ding-Yuan, Persson, Axel R, Wen, Kai-Hsin, Sommer, Daniel, Grünenpütt, Jan, Blanck, Hervé, Thorsell, Mattias, Kordina, Olof, Darakchieva, Vanya, Persson, Per O Å, Chen, Jr-Tai, Rorsman, Niklas

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Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs by Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, Jan, Sommer, Daniel, Blanck, Hervé, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.

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Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching by Riedmüller, Sandra, Steinmann, Claudia, Grünenpütt, Jan, Scholz, Ferdinand, Blanck, Hervé

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Impact of in situ NH 3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance by Chen, Ding-Yuan, Persson, Axel R, Wen, Kai-Hsin, Sommer, Daniel, Grünenpütt, Jan, Blanck, Hervé, Thorsell, Mattias, Kordina, Olof, Darakchieva, Vanya, Persson, Per O Å, Chen, Jr-Tai, Rorsman, Niklas

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Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress by Gao, Zhan, Rampazzo, Fabiana, Meneghini, Matteo, Modolo, Nicola, De Santi, Carlo, Blanck, Hervé, Stieglauer, Hermann, Sommer, Daniel, Grünenpütt, Jan, Kordina, Olof, Chen, Jr-Tai, Jacquet, J-C, Lacam, C., Piotrowicz, S., Meneghesso, Gaudenzio, Zanoni, Enrico

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion by Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Simon-Najasek, Michel, Poppitz, David, Meneghesso, Gaudenzio, Zanoni, Enrico

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse by Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grunenputt, Jan, Sommer, Daniel, Blanck, Herve, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.

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Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs by Chang, Christophe, Di Giacomo-Brunel, Valeria, Floriot, Didier, Grunenputt, Jan, Hosch, Michael, Blanck, Herve

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Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs by Chang, Christophe, Di Giacomo-Brunel, Valeria, Floriot, Didier, Grunenputt, Jan, Hosch, Michael, Blanck, Herve

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