Search Results - Grahn, Jan V.

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  1. 1
    Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications

    Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications by Malmkvist, M., Shumin Wang, Grahn, J.V.

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  2. 2
    Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

    Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs by Eunjung Cha, Moschetti, Giuseppe, Wadefalk, Niklas, Nilsson, Per-Ake, Bevilacqua, Stella, Pourkabirian, Arsalan, Starski, Piotr, Grahn, Jan

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  3. 3
    Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

    Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement by Linder, M., Ingvarson, F., Jeppson, K.O., Grahn, J.V., Shi-Li Zhang, Ostling, M.

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  4. 4
    A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

    A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors by Sanden, M., Zhang, S.-L., Grahn, J.V., Ostling, M.

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  5. 5
    Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics

    Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics by Malm, B.Gunnar, Grahn, Jan V, Östling, Mikael

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  6. 6
    Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

    Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors by Sandén, Martin, Malm, B.Gunnar, Grahn, Jan V, Östling, Mikael

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  7. 7
    Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

    Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors by Sandén, Martin, Gunnar Malm, B, Grahn, Jan V, Östling, Mikael

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  8. 8
    Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

    Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure by Suvar, E, Haralson, E, Radamson, H.H, Wang, Y.-B, Grahn, J.V, Malm, B.G, Östling, M

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  9. 9
    Implanted collector profile optimization in a SiGe HBT process

    Implanted collector profile optimization in a SiGe HBT process by Malm, Bengt Gunnar, Johansson, Ted, Arnborg, Torkel, Norström, Hans, Grahn, Jan V., Östling, Mikael

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  10. 10
    Frequency stabilization of a terahertz quantum-cascade laser to the Lamb dip of a molecular absorption line

    Frequency stabilization of a terahertz quantum-cascade laser to the Lamb dip of a molecular absorption line by Voigt, R, Wienold, M, Jayasankar, D, Drakinskiy, V, Stake, J, Sobis, P, Schrottke, L, Lü, X, Grahn, H T, Hübers, H-W

    Published in Optics express
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  11. 11
    On DC modeling of the base resistance in bipolar transistors

    On DC modeling of the base resistance in bipolar transistors by Linder, M, Ingvarson, F, Jeppson, K.O, Grahn, J.V, Zhang, S.-L, Östling, M

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