Search Results - Grasby, T.J.

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  1. 1
    Evidence of reduced self-heating in strained Si MOSFETs

    Evidence of reduced self-heating in strained Si MOSFETs by Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Skotnicki, T.

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  2. 2
    Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

    Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs by von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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  3. 3
    SiGe(C) epitaxial technologies—issues and prospectives

    SiGe(C) epitaxial technologies—issues and prospectives by Grasby, T.J, Whall, T.E, Parker, E.H.C

    Published in Thin solid films
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  4. 4
    High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate

    High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate by Nicholas, G., Grasby, T.J., Fulgoni, D.J.F., Beer, C.S., Parsons, J., Meuris, M., Heyns, M.M.

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  5. 5
    Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

    Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates by Parsons, J., Beer, C.S., Leadley, D.R., Capewell, A.D., Grasby, T.J.

    Published in Thin solid films
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  6. 6
    On the electron mobility enhancement in biaxially strained Si MOSFETs

    On the electron mobility enhancement in biaxially strained Si MOSFETs by Driussi, F., Esseni, D., Selmi, L., Hellström, P.-E., Malm, G., Ha˚llstedt, J., Östling, M., Grasby, T.J., Leadley, D.R., Mescot, X.

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  7. 7
    High Mobility Strained Ge pMOSFETs With High-[kappa]/Metal Gate

    High Mobility Strained Ge pMOSFETs With High-[kappa]/Metal Gate by Nicholas, G, Grasby, T.J, Fulgoni, D.J.F, Beer, C.S, Parsons, J, Meuris, M, Heyns, M.M

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  8. 8
    Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

    Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy by Morris, R. J. H., Leadley, D. R., Hammond, R., Grasby, T. J., Whall, T. E., Parker, E. H. C.

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  9. 9
    Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

    Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs by PREST, M. J, PALMER, M. J, ASENOV, A, BARKER, J. R, GRASBY, T. J, PHILLIPS, P. J, MIRONOV, O. A, PARKER, E. H. C, WHALL, T. E, WAITE, A. M, EVANS, A. G. R, WATLING, J. R

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  10. 10
    Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

    Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs by Prest, M.J, Palmer, M.J, Grasby, T.J, Phillips, P.J, Mironov, O.A, Parker, E.H.C, Whall, T.E, Waite, A.M, Evans, A.G.R, Watling, J.R, Asenov, A, Barker, J.R

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  11. 11
    Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

    Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise by Prest, M.J., Palmer, M.J., Braithwaite, G., Grasby, T.J., Phillips, P.J., Mironov, O.A., Parker, E.H.C., Whall, T.E., Waite, A.M., Evans, A.G.R.

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