SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications by Jae-Sung Rieh, Jagannathan, B., Greenberg, D.R., Meghelli, M., Rylyakov, A., Guarin, F., Zhijian Yang, Ahlgren, D.C., Freeman, G., Cottrell, P., Harame, D.

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Nonlinear source and drain resistance in recessed-gate heterostructure field-effect transistors by Greenberg, D.R., Del Alamo, J.A.

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Self-aligned SiGe NPN transistors with 285 GHz fmax and 207 GHz fT in a manufacturable technology by Jagannathan, B., Khater, M., Pagette, F., Rieh, J.-S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S.J., Johnson, J., Mengistu, E., Schonenberg, K.T., Schnabel, C.M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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Impact ionization and transport in the InAlAs/n/sup +/-InP HFET by Greenberg, D.R., del Alamo, J.A., Bhat, R.

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Velocity saturation in the extrinsic device: a fundamental limit in HFET's by Greenberg, D.R., del Alamo, J.A.

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Reverse noise measurement and use in device characterization by Randa, J., McKay, T., Sweeney, S.L., Walker, D.K., Wagner, L., Greenberg, D.R., Tao, J., Ali Rezvani, G.

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Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology by Jagannathan, B., Khater, M., Pagette, F., Rieh, J.-S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S.J., Johnson, J., Mengistu, E., Schonenberg, K.T., Schnabel, C.M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer by Greenberg, D.R., del Alamo, J.A., Bhat, R.

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Fundamental Power and Frequency Limits of Deeply-Scaled CMOS for RF Power Applications by Scholvin, J., Greenberg, D.R., del Alamo, J.A.

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HBT low-noise performance in a 0.18 /spl mu/m SiGe BiCMOS technology by Greenberg, D.R., Ahlgren, D., Freeman, G., Subbanna, S., Radisic, V., Harvey, D.S., Webster, C., Larson, L.

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HBT low-noise performance in a 0.18 /spl mu/m SiGe BiCMOS technology by Greenberg, D.R., Ahlgren, D., Freeman, G., Subbanna, S., Radisic, V., Harvey, D.S., Webster, C., Larson, L.

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A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications by Greenberg, D.R., del Alamo, J.A., Harbison, J.P., Florez, L.T.

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Performance and limitations of 65 nm CMOS for integrated RF power applications by Scholvin, J., Greenberg, D.R., del Alamo, J.A.

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Noise performance scaling in high-speed silicon RF technologies by Greenberg, D.R., Sweeney, S., Jagannathan, B., Freeman, G., Ahlgren, D.

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RF power potential of 90 nm CMOS: device options, performance, and reliability by Scholvin, J., Greenberg, D.R., del Alamo, J.A.

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Noise performance of a low base resistance 200 GHz SiGe technology by Greenberg, D.R., Jagannathan, B., Sweeney, S., Freeman, G., Ahlgren, D.

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Lateral scaling of the self-aligned extrinsic base in SiGe HBTs by Jeng, S.J., Greenberg, D.R., Longstreet, M., Nueckel, G., Harame, D.L., Jadus, D.

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A submicron InAlAs/n/sup +/-InP HFET with reduced impact ionization by Greenberg, D.R., del Alamo, J.A., Bhat, R.

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SiGe HBT Performance Improvements from Lateral Scaling by Freeman, G., Greenberg, D.R., Walter, K., Subbanna, S.

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RF characterization and parameter extraction for CMOS device models by Pekarik, J.J., Basanth Jagannathan, Li-hong Pan, Jing Wang, Groves, R., Hongmei Li, Xiaowei Tian, Greenberg, D.R., Zhenrong Jin, Wagner, L.

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