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Full Characterization of GaAs Power MESFET and Accurate Load-Pull Contours Prediction
by
Lajugie, M.
,
Grossier, F.
,
Silbermann, A.
,
Bender, Y.
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Accurate nonlinear transistor modeling using pulsed S parameters measurements under pulsed bias conditions
by
Vidalou, J.F.
,
Grossier, J.F.
,
Chaumas, M.
,
Camiade, M.
,
Roux, P.
,
Obregon, J.
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Conference Proceedings
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Power Measurement
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Bipolar Transistors
1 results
1
Breakdown Voltage
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Current Measurement
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Electric Breakdown
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Fets
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Frequency Measurement
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Gain Measurement
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Gallium Arsenide
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Impedance Measurement
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Mesfets
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Microwave Integrated Circuits
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Mmics
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Power Amplifiers
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Predictive Models
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Pulse Amplifiers
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Pulse Measurements
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Scattering Parameters
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Semiconductor Process Modeling
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Ieee Electronic Library (Iel) Conference Proceedings
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Ieee Xplore All Conference Series
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