Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis by Pilati, M., Buffolo, M., Rampazzo, F., Lambert, B., Sommer, D., Grünenpütt, J., De Santi, C., Meneghesso, G., Zanoni, E., Meneghini, M.

Get full text

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier by Gao, Z., Chiocchetta, F., De Santi, C., Modolo, N., Rampazzo, F., Meneghini, M., Meneghesso, G., Zanoni, E., Blanck, H., Stieglauer, H., Sommer, D., Benoit, L., Grunenputt, J., Kordina, O., Chen, Jr-Tai, Jacquet, J-C, Lacam, C., Piotrowicz, S.

Request full text

A high-power W-band pseudomorphic InGaAs channel PHEMT by Gaquiere, C., Grunenputt, J., Jambon, D., Delos, E., Ducatteau, D., Werquin, M., Theron, D., Fellon, P.

Get full text

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress by Brunel, L., Lambert, B., Mezenge, P., Bataille, J., Floriot, D., Grünenpütt, J., Blanck, H., Carisetti, D., Gourdel, Y., Malbert, N., Curutchet, A., Labat, N.

Get full text

Proton induced trapping effect on space compatible GaN HEMTs by Stocco, A., Gerardin, S., Bisi, D., Dalcanale, S., Rampazzo, F., Meneghini, M., Meneghesso, G., Grünenpütt, J., Lambert, B., Blanck, H., Zanoni, E.

Get full text

Failure signatures on 0.25μm GaN HEMTs for high-power RF applications by Stocco, A., Dalcanale, S., Rampazzo, F., Meneghini, M., Meneghesso, G., Grünenpütt, J., Lambert, B., Blanck, H., Zanoni, E.

Get full text

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices by Graff, A., Simon-Najasek, M., Altmann, F., Kuzmik, J., Gregušová, D., Haščík, Š., Jung, H., Baur, T., Grünenpütt, J., Blanck, H.

Get full text

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs by Rzin, M., Chini, A., De Santi, C., Meneghini, M., Hugger, A., Hollmer, M., Stieglauer, H., Madel, M., Splettstößer, J., Sommer, D., Grünenpütt, J., Beilenhoff, K., Blanck, H., Chen, J.-T., Kordina, O., Meneghesso, G., Zanoni, E.

Get full text

Verification of a frequency dispersion model in the performance of a GaAs pHEMT travelling-wave MMIC by Kallfass, I., Zhang, C., Grunenputt, J., Teyssandier, C., Schumacher, H.

Request full text

Coplanar W-band low noise amplifier MMIC using 100-nm gate-length GaAs PHEMTs by Bessemoulin, A., Grunenputt, J., Felton, P., Tessmann, A., Kohn, E.

Request full text

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress by Gao, Zhan, Rampazzo, Fabiana, Meneghini, Matteo, Modolo, Nicola, De Santi, Carlo, Blanck, Hervé, Stieglauer, Hermann, Sommer, Daniel, Grünenpütt, Jan, Kordina, Olof, Chen, Jr-Tai, Jacquet, J-C, Lacam, C., Piotrowicz, S., Meneghesso, Gaudenzio, Zanoni, Enrico

Get full text