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A 0.08 /spl mu/m/sup 2/-sized 8F/sup 2/ stack DRAM cell for multi-gigabit DRAM
by
Hyunpil Noh
,
Suock Jeong
,
Seongjoon Lee
,
Yousung Kim
,
Woncheol Cho
,
Min Huh
,
Gucheol Jeong
,
Jaebuhm Suh
,
Hoyeop Kweon
,
Jaesung Roh
,
Kisoo Shin
,
Sangdon Lee
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A 0.08μm2-sized 8F2 Stack DRAM cell for multi-gigabit DRAM
by
NOH, Hyunpil
,
JEONG, Suock
,
SHIN, Kisoo
,
LEE, Sangdon
,
LEE, Seongjoon
,
KIM, Yousung
,
CHO, Woncheol
,
HUH, Min
,
JEONG, Gucheol
,
SUH, Jaebuhm
,
KWEON, Hoyeop
,
ROH, Jaesung
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A 0.115 /spl mu/m/sup 2/ 8F/sup 2/ DRAM working cell with LPRD (low parasitic resistance device) and poly metal gate technology for gigabit DRAM
by
Hyunpil Noh
,
Woncheol Cho
,
Gucheol Jeong
,
Min Huh
,
Jaemin Ahn
,
Ysung Kim
,
Suock Jeong
,
Seongjoon Lee
,
Dongseok Kim
,
Hazoong Kim
,
Jaebuhm Suh
,
Jinwon Park
,
Sang-don Lee
,
Hee-koo Yoon
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Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes
by
Han, Jaecheon
,
Kang, Gucheol
,
Kang, Daesung
,
Moon, Yongtae
,
Jeong, Hwanhee
,
Song, June-O
,
Seong, Tae-Yeon
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Journal of electronic materials
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