Search Results - Guclu, Cigdem Sukriye

  • Showing 1 - 6 results of 6
Refine Results
  1. 1
    Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method

    Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe:PVA via the admittance method by Guclu, Cigdem Sukriye, Altındal, Şemsettin, Erbilen Tanrikulu, Esra

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    On the impact of pure PVC and (PVC: Ti) interlayer on the conduction mechanisms and physical parameters of classic metal-semiconductor (MS) Schottky diodes (SDs)

    On the impact of pure PVC and (PVC: Ti) interlayer on the conduction mechanisms and physical parameters of classic metal-semiconductor (MS) Schottky diodes (SDs) by Güçlü, Çiğdem Şükriye

    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:
  3. 3
    The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

    The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height by Lapa, Havva Elif, Güçlü, Çiğdem Şükriye, Aldemir, Durmuş Ali, Özdemir, Ahmet Faruk

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  4. 4
    Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers

    Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers by Badali, Yosef, Güçlü, Çiğdem Şükriye

    Published in Physica scripta
    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:
  5. 5
    A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

    A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements by Güçlü, Çiğdem Şükriye, Ulusoy, Murat, Altındal, Şemsettin

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  6. 6
    A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature

    A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/G-V) measurements in a wide range of temperature by Erbilen Tanrıkulu, Esra, Güçlü, Çiğdem Şükriye, Altındal, Şemsettin, Durmuş, Haziret

    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:

Search Tools: