Search Results - HA, Jong-Bong

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  1. 1
    Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

    Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate by IM, Ki-Sik, HA, Jong-Bong, KIM, Ki-Won, LEE, Jong-Sub, KIM, Dong-Seok, HAHM, Sung-Ho, LEE, Jung-Hee

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  2. 2
    Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique

    Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique by Ha, Jong-Bong, Kang, Hee-Sung, Baek, Ki-Ju, Lee, Jung-Hee

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  3. 3
    Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

    Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film by Ha, Jong-Bong, Yun, Sang-Won, Lee, Jung-Hee

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  4. 4
    High threshold voltage p-GaN gate power devices on 200 mm Si

    High threshold voltage p-GaN gate power devices on 200 mm Si by Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, Hyoji Choi, Soogine Chong, Hyun-Sik Choi, Woochul Jeon, Hyuk Soon Choi, Jun Yong Kim, Young Hwan Park, Kyung Yeon Kim, Jong-Bong Park, Jong-Bong Ha, Ki Yeol Park, Jaejoon Oh, Jai Kwang Shin, U-In Chung, In-Kyeong Yoo, Kinam Kim

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  5. 5
    Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

    Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method by Kim, Dong-Seok, Kim, Tae-Hyeon, Won, Chul-Ho, Kang, Hee-Sung, Kim, Ki-Won, Im, Ki-Sik, Lee, Yong Soo, Hahm, Sung-Ho, Lee, Jung-Hee, Lee, Jae-Hoon, Ha, Jong-Bong, Bae, Youngho, Cristoloveanu, Sorin

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  6. 6
    Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition

    Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition by Yang, Chung-Mo, Yun, Sang-Won, Ha, Jong-Bong, Cho, Hyun-Ick, Lee, Heon-Bok, Jeong, Jong-Hwa, Kong, Sung-Ho, Hahm, Sung-Ho, Lee, Jung-Hee

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  7. 7
    Effect of catalyst for nickel films for NiSi formation with improved interface roughness

    Effect of catalyst for nickel films for NiSi formation with improved interface roughness by Kang, Hee-Sung, Ha, Jong-Bong, Lee, Jung-Hee, Choi, Chi Kyu, Lee, Jeong Yong, Lee, Kwang-Man

    Published in Thin solid films
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  8. 8
    Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET

    Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET by Kim, Ki-Won, Jung, Sung-Dal, Kim, Dong-Seok, Kang, Hee-Sung, Im, Ki-Sik, Oh, Jae-Joon, Ha, Jong-Bong, Shin, Jai-Kwang, Lee, Jung-Hee

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  9. 9
    Normally-off operation of Al2O3/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer

    Normally-off operation of Al2O3/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer by Dong-Seok Kim, Jong-Bong Ha, Sung-Nam Kim, Eun-Hwan Kwak, Sung-Gil Lee, Jong-Sub Lee, Ki-Sik Im, Ki-Won Kim, Jung-Hee Lee

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  10. 10
    Optimizing the Gate-to-Drift Overlap Length of Lateral Double Diffused Metal–Oxide–Semiconductor Field Effect Transistor Devices to Improve Hot-Carrier Device Lifetime

    Optimizing the Gate-to-Drift Overlap Length of Lateral Double Diffused Metal–Oxide–Semiconductor Field Effect Transistor Devices to Improve Hot-Carrier Device Lifetime by Ha, Jong-Bong, Choi, Moon-Ho, Kim, Nam-Soo, Kim, Yeong-Seuk

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  11. 11
    Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Postdeposition Annealing

    Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Postdeposition Annealing by Ha, Jong-Bong, Kim, Dong-Seok, Im, Ki-Sik, Kim, Ki-Won, Kang, Hee-Sung, Park, Ki-Yeol, Lee, Jung-Hee

    Published in Jpn J Appl Phys
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  12. 12
    Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

    Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer by Lee, Hwa-Chul, Hyun, Sun-Young, Cho, Hyun-Ick, Ostermaier, Clemens, Kim, Ki-Won, Ahn, Sang-Il, Ha, Jong-Bong, Kwon, Dae-Hyuk, Hahn, Cheol-Koo, Hahm, Sung-Ho, Choi, Hyun-Chul, Lee, Jung-Hee

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  13. 13
    Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET

    Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET by KIM, Ki-Won, JUNG, Sung-Dal, KIM, Dong-Seok, KANG, Hee-Sung, IM, Ki-Sik, OH, Jae-Joon, HA, Jong-Bong, SHIN, Jai-Kwang, LEE, Jung-Hee

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  14. 14
    Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

    Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing by Kang, Hee-Sung, Siva Pratap Reddy, M, Kim, Dong-Seok, Kim, Ki-Won, Ha, Jong-Bong, Lee, Yong Soo, Choi, Hyun-Chul, Lee, Jung-Hee

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  15. 15
    Superior contact properties of trench filled contact for 3D MOSFET

    Superior contact properties of trench filled contact for 3D MOSFET by Jae-Hyun Jung, Heon-Bok Lee, Jong-Bong Ha, Hee-Sung Kang, Jung-Hee Lee, Sung-Ho Hahm

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  16. 16
    Effect of oxygen species on the positive flat-band voltage shift in Al 2 O 3 /GaN metal–insulator–semiconductor capacitors with post-deposition annealing

    Effect of oxygen species on the positive flat-band voltage shift in Al 2 O 3 /GaN metal–insulator–semiconductor capacitors with post-deposition annealing by Kang, Hee-Sung, Siva Pratap Reddy, M, Kim, Dong-Seok, Kim, Ki-Won, Ha, Jong-Bong, Lee, Yong Soo, Choi, Hyun-Chul, Lee, Jung-Hee

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  17. 17
    Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film

    Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film by Jong-Bong Ha, Hee-Sung Kang, Sung-Gil Lee, Jung-Hee Lee

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  18. 18
    Effects of TMAH Treatment on Device Performance of Normally Off [Formula Omitted] MOSFET

    Effects of TMAH Treatment on Device Performance of Normally Off [Formula Omitted] MOSFET by Kim, Ki-Won, Jung, Sung-Dal, Kim, Dong-Seok, Kang, Hee-Sung, Im, Ki-Sik, Oh, Jae-Joon, Ha, Jong-Bong, Shin, Jai-Kwang, Lee, Jung-Hee

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  19. 19
    Effects of TMAH Treatment on Device Performance of Normally Off hbox Al 2 hbox O 3 / hbox GaN MOSFET

    Effects of TMAH Treatment on Device Performance of Normally Off hbox Al 2 hbox O 3 / hbox GaN MOSFET by Kim, Ki-Won, Jung, Sung-Dal, Kim, Dong-Seok, Kang, Hee-Sung, Im, Ki-Sik, Oh, Jae-Joon, Ha, Jong-Bong, Shin, Jai-Kwang, Lee, Jung-Hee

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  20. 20
    Improvement of field effect mobility with dual-work function gate in n-LDMOST by using ni-silicidation of poly-Si gate

    Improvement of field effect mobility with dual-work function gate in n-LDMOST by using ni-silicidation of poly-Si gate by Jong-Bong Ha, Hee-Sung Kang, Ki-Won Kim, Ki-Sik Im, Dong-Seok Kim, Eun-Hwan Kwak, Sung-Nam Kim, Sung-Gil Lee, Jung-Hee Lee

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