Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology by Blanquart, L., Delpierre, P., Habrard, M.C., Mekkaoui, A., Mouthuy, T., Dentan, M., Delagnes, E., Fourches, N., Rouger, M., Truche, R., Delevoye, E., de Pontcharra, J., Blanc, J.P., Flament, O., Leray, J., Musseau, O.

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Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers by Dierickx, B., Wouters, D., Willems, G., Alaerts, A., Debusschere, I., Simoen, E., Vlummens, J., Akimoto, H., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Anghinolfi, F., Campbell, M., Pengg, F.X., Aspell, P., Bosisio, L., Focardi, E., Forti, F., Kashigin, S., Mekkaoui, A., Habrard, M.C., Sauvage, D., Delpierre, P.

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Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics by Dentan, M., Delagnes, E., Fourches, N., Rouger, M., Habrard, M.C., Blanquart, L., Delpierre, P., Potheau, R., Truche, R., Blanc, J.P., Delevoye, E., Gautier, J., Pelloie, J.L., de Pontcharra, J., Flament, O., Leray, J.L., Martin, J.L., Montaron, J., Musseau, O.

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Deposition of amorphous SiNxH films on InP in the presence of AsH3 by COMMERE, B, HABRARD, M. C, KRAWCZYK, S. K, BRUYERE, J. C

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A 1006 element hybrid silicon pixel detector with strobed binary output by Anghinolfi, F., Aspell, P., Bass, K., Beusch, W., Bosisio, L., Boutonnet, C., Burger, P., Campbell, M., Chesi, E., Claeys, C., Clemens, J.C., Cohen Solal, M., Debusschere, I., Delpierre, P., Di Bari, D., Dierickx, B., Enz, C.C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M.C., Heijne, E.H.M., Hermans, L., Hurst, R., Inzani, P., Jaeger, J.J., Jarron, P., Krummenacher, F., Lemeilleur, F., Lenti, V., Manzari, V., Meddeler, G., Morando, M., Munns, A., Nava, F., Navach, F., Neyer, C., Ottaviani, G., Pellegrini, F., Pengg, F., Perego, R., Pindo, M., Potheau, R., Quercigh, E., Redaelli, N., Rossi, L., Sauvage, D., Segato, G., Simone, S., Stefanini, G., Tonelli, G., Vanstraelen, G., Vegni, G., Verweij, H., Viertel, G.M., Waisbard, J.

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DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics by Dentan, M., Abbon, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Blanquart, L., Aubert, J.J., Bonzom, V., Delpierre, P., Habrard, M.C., Mekkaoui, A., Potheau, R., Ardelean, J., Hrisoho, A., Breton, D.

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Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon by Habrard, M.C., Bensouda, M., Bruyere, J.C., Jousse, D.

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Configurational statistics in a-SixNyHz alloys: a quantitative bonding analysis by BUSTARRET, E, BENSOUDA, M, BAHRARD, M. C, BRUYERE, J. C, POULIN, S, GUJRATHI, S. C

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Deposition of amorphous SiN x H films on InP in the presence of AsH3 by Commère, B., Habrard, M. C., Krawczyk, S. K., Bruyère, J. C.

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Configurational statistics in a - Si x N y H z alloys: A quantitative bonding analysis by Bustarret, E., Bensouda, M., Habrard, M. C., Bruyère, J. C., Poulin, S., Gujrathi, S. C.

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A 1006 element hybrid silicon pixel detector with strobed binary output by Anghinolfi, F., Aspell, P., Bass, K., Beusch, W., Bosisio, L., Boutonnet, C., Burger, P., Campbell, M., Chesi, E., Claeys, C., Clemens, J.C., Cohen Solal, M., Debusschere, I., Delpierre, P., Di Bari, D., Dierickx, B., Enz, C.C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M.C., Heijne, E.H.M., Hermans, L., Hurst, R., Inzani, P., Jaeger, J.J., Jarron, P., Krummenacher, F., Lemeilleur, F., Lenti, V., Manzari, V., Meddeler, G., Morando, M., Munns, A., Nava, F., Navach, F., Neyer, C., Ottaviani, G., Pellegrini, F., Pengg, F., Perego, R., Pindo, M., Potheau, R., Quercigh, E., Redaelli, N., Rossi, L., Sauvage, D., Segato, G., Simone, S., Stefanini, G., Tonelli, G., Vanstraelen, G., Vegni, G., Verweij, H., Viertel, G.M., Waisbard, J.

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DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics by Dentan, M., Abbon, P., Borgeaud, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebbard, J., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Blanquart, L., Aubert, J.J., Bonzom, V., Delpierre, P., Habrard, M.C., Mekkaoui, A., Potheau, R., Ardelean, J., Hrisoho, A., Breton, D.

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Integration of CMOS-electronics in an SOI layer on high-resistivity silicon substrates by Dierickx, B., Alaerts, A., Debusschere, I., Simoen, E., Vlummens, J., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Anghinolfi, F., Aspell, P., Campbell, M., Pengg, F.X., Bosisio, L., Focardi, E., Delpierre, P., Mekkaoui, A., Habrard, M.C., Sauvage, D.

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Detector diodes and test devices fabricated in high resistivity SOI wafers by Bosisio, L., Focardi, E., Forti, F., Kashigin, S., Dierickx, B., Wouters, D., Willems, G., Winderickx, G., Debusschere, I., Simoen, E., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Campbell, M., Anghinolfi, F., Aspell, P., Delpierre, P., Sauvage, D., Habrard, M.C.

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