Search Results - HUILING SHANG

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  1. 21
    Electron holography for 2-D dopant profiling

    Electron holography for 2-D dopant profiling by Gribelyuk, M.A., Jun Yuan, Gluschenkov, O., Ronsheim, P., Huiling Shang

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  2. 22
    A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications

    A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications by Chengwen Pei, Booth, R., Ho, H., Kusaba, N., Xi Li, Brodsky, M.-J., Parries, P., Huiling Shang, Divakaruni, R., Iyer, S.

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  3. 23
    Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge

    Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge by James Jer-Hueih Chen, Bojarezuk, N.A., Huiling Shang, Copel, M., Hannon, J.B., Karasinski, J., Preisler, E., Banerjee, S.K., Guha, S.

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  4. 24
    Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge

    Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge by Koester, S.J., Frank, M.M., Isaacson, D.M., Huiling Shang

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  5. 25
    An ultra-thin midgap gate FDSOI MOSFET

    An ultra-thin midgap gate FDSOI MOSFET by Shang, Huiling, White, Marvin H.

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  6. 26
    Ultrathin Al(2)O(3) and HfO(2) gate dielectrics on surface-nitrided Ge

    Ultrathin Al(2)O(3) and HfO(2) gate dielectrics on surface-nitrided Ge by Chen, James Jer-Hueih, Bojarezuk, N A, Shang, Huiling, Copel, M, Hannon, J B, Karasinski, J, Preisler, E, Banerjee, S K, Guha, S

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  7. 27
    High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS

    High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS by Shang, Huiling, Chu, Jack O., Bedell, Stephen W., Ott, John

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  8. 28
    Interface studies of tungsten gate metal–oxide–silicon capacitors

    Interface studies of tungsten gate metal–oxide–silicon capacitors by Shang, Huiling, White, Marvin H., Guarini, Kathryn W., Solomon, Paul, Cartier, Eduard, McFeely, Fenton R., Yurkas, John J., Lee, Wen-Chin

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  9. 29
    Ultrathin Al sub(2)O sub(3) and HfO sub(2) gate dielectrics on surface-nitrided Ge

    Ultrathin Al sub(2)O sub(3) and HfO sub(2) gate dielectrics on surface-nitrided Ge by Jer-Hueih Chen, James, Bojarezuk, NA Jr, Shang, Huiling, Copel, M, Hannon, J B, Karasinski, J, Preisler, E, Banerjee, S K, Guha, S

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  10. 30
    Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications

    Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications by Wang, Xinlin, Rim, Ken, Shang, Huiling, Koester, Steve, Oldiges, Phil, Ieong, Meikei

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  11. 31
    Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology

    Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology by Shang, Huiling, White, Marvin H, Adams, Dennis A

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  12. 32
    A novel 6H-SiC power DMOSFET with implanted p-well spacer

    A novel 6H-SiC power DMOSFET with implanted p-well spacer by Vathulya, V.R., Shang, H., White, M.H.

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  13. 33
    CMOS devices mobility enhancement and low resistance source/drain

    CMOS devices mobility enhancement and low resistance source/drain by Boeuf, F., Huiling Shang

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  14. 34
    Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

    Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology by Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, D.C., Hook, T., Jun Yuan, Chan, V., Huiling Shang, Chu-Hsin Liang, Lindsay, R., Sungjoon Park, Hyotae Choo

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  15. 35
    Characterization of Sputtered-TaN metal gate for SiO/sub 2/ and HfO/sub 2/ gate dielectrics

    Characterization of Sputtered-TaN metal gate for SiO/sub 2/ and HfO/sub 2/ gate dielectrics by Yijie Zhao, Eberly, B., Huiling Shang, White, M.H.

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  16. 36
    A Low Voltage SANOS Nonvolatile Semiconductor Memory (NVSM) Device

    A Low Voltage SANOS Nonvolatile Semiconductor Memory (NVSM) Device by Yijie Zhao, Xiaonan Wang, Huiling Shang, White, M.H.

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  17. 37
    Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS

    Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS by Huiling Shang, Chu, J.O., Bedell, S., Gusev, E.P., Jamison, P., Ying Zhang, Ott, J.A., Copel, M., Sadana, D., Guarini, K.W., Meikei Ieong

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  18. 38
    Characterization of midgap tungsten gate MOSFETs

    Characterization of midgap tungsten gate MOSFETs by Huiling Shang, White, M.H., Guarini, K.W., Cartier, E., Solomon, P.

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  19. 39
    Device and substrate design for sub-10 nm MOSFETs

    Device and substrate design for sub-10 nm MOSFETs by IEONG, Meikei, DORIS, Bruce, KEDZIERSKI, Jakub, REN, Zhibin, RIM, Ken, MIN YANG, SHANG, Huiling, CHANG, Leland

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  20. 40
    Scaling beyond conventional CMOS device

    Scaling beyond conventional CMOS device by Meikei Ieong, Dons, B., Kedzierski, J., Zhibin Ren, Ken Rim, Min Yang, Huiling Shang

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