Thermally stable ohmic contacts to n-type GaAs. VII, Addition of Ge or Si to NiInW ohmic contacts by MURAKAMI, M, PRICE, W. H, NORCOTT, M, HALLALI, P.-E

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Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs by BARATTE, H, SADANA, D. K, DE SOUZA, J. P, HALLALI, P. E, SCHAD, R. G, NORCOTT, M, CARDONE, F

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Thermally stable ohmic contacts to p -type GaAs. IX. NiInW and NiIn(Mn)W contact metals by Hallali, P.-E., Murakami, Masanori, Price, W. H., Norcott, M. H.

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High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment by Kiehl, R.A., Hallali, P.E., Yates, J., Tischler, M.A., Potemski, R.M., Cardone, F.

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Effect of F co-implant during annealing of Be-implanted GaAs by HALLALI, P. E, BARATTE, H, CARDONE, F, NORCOTT, M, LEGOUES, F, SADANA, D. K

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Zn‐Diffused p‐n Junction in the Quarternary  ( Al0.48In0.52As )  z  ( Ga0.47In0.53As ) 1 − z by Hallali, P. E., Blanconnier, P., Praseuth, J. P.

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Very Low Resistivity AuMn Gate Ohmic Contacts for GaInAs Diffused JFETs by Hallali, P.E., Blanconnier, P., Bricard, L., Renaud, J.C.

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Thermally stable ohmic contacts to p-type GaAs. IX : NilnW an Niln(Mn)W contact metals by HALLALI, P.-E, MURAKAMI, M, PRICE, W. H, NORCOTT, M. H

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Zn-diffused p-n junction in the quaternary (Al0.48In0.52As)z(Ga0.47In0.53As)1-z by HALLALI, P. E, BLANCONNIER, P, PRASEUTH, J. P

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