Search Results - Hambourger, P.D.

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  1. 1
    Magnetoresistance of 2H−NbSe 2

    Magnetoresistance of 2H−NbSe 2 by Hambourger, P.D., Lewis, N.E.

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  2. 2
    Structural chemistry of Au(III)-substituted Ba 2YCu 3O 7−δ

    Structural chemistry of Au(III)-substituted Ba 2YCu 3O 7−δ by Hepp, A.F., Gaier, J.R., Pouch, J.J., Hambourger, P.D.

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  3. 3
    Structural chemistry of Au(III)-substituted Ba2YCu3O7-δ

    Structural chemistry of Au(III)-substituted Ba2YCu3O7-δ by HEPP, A. F, GAIER, J. R, POUCH, J. J, HAMBOURGER, P. D

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  4. 4
    Transport properties of 1T-TaS 2-xSe x

    Transport properties of 1T-TaS 2-xSe x by Hambourger, P.D., Di Salvo, F.J.

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  5. 5
    Electronic conduction process in 1T-TaS2

    Electronic conduction process in 1T-TaS2 by Hambourger, P.D., di Salvo, F.J.

    Published in Physica B + C
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  6. 6
    Transport properties of 1T-TaS2-xSex

    Transport properties of 1T-TaS2-xSex by Hambourger, P.D., Di Salvo, F.J.

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  7. 7
    Electronic conduction process in 1T-TaS 2

    Electronic conduction process in 1T-TaS 2 by Hambourger, P.D., di Salvo, F.J.

    Published in Physica B + C
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  8. 8
    Magnetoresistance of 2H−NbSe2

    Magnetoresistance of 2H−NbSe2 by Hambourger, P.D., Lewis, N.E.

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  9. 9
    Normal-state electronic properties of Sn0.12Eu1.08Mo6S8 at low temperature and high pressure

    Normal-state electronic properties of Sn0.12Eu1.08Mo6S8 at low temperature and high pressure by Hambourger, P.D., Huang, C.Y., Luo, H.L., Segall, B.

    Published in Physica B + C
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  10. 10
    Pressure effect on the metal-semiconductor transition in 1-T TaS 2

    Pressure effect on the metal-semiconductor transition in 1-T TaS 2 by Chu, C.W., Huang, S., Hambourger, P.D., Thompson, A.H.

    Published in Physics letters. A
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  11. 11
    Size-Dependent Oscillatory Magnetoresistance in Cadmium

    Size-Dependent Oscillatory Magnetoresistance in Cadmium by Hambourger, P. D., Marcus, J. A.

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  12. 12
    Normal-state electronic properties of Sn 0.12Eu 1.08Mo 6S 8 at low temperature and high pressure

    Normal-state electronic properties of Sn 0.12Eu 1.08Mo 6S 8 at low temperature and high pressure by Hambourger, P.D., Huang, C.Y., Luo, H.L., Segall, B.

    Published in Physica B + C
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  13. 13
    Pressure effect on the metal-semiconductor transition in 1-T TaS2

    Pressure effect on the metal-semiconductor transition in 1-T TaS2 by Chu, C.W., Huang, S., Hambourger, P.D., Thompson, A.H.

    Published in Physics letters. A
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