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Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing
by
Han, Yoolim
,
Go, Ju Mi
,
Yang, Kyungmi
,
Kim, Minsu
,
Kim, Kwangeun
Published in
Journal of the Korean Physical Society
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Journal Of The Korean Physical Society
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Annealing
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Charge Density
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Contact Angle
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Deposition
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Energy Band Bending
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Energy Bands
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Gan
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Hafnium Oxide
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Hfo
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Interface Charge Density
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Interfaces
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Interfacial Properties
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Mathematical And Computational Physics
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Original Paper - Condensed Matter
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Particle And Nuclear Physics
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Photoelectrons
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Physical Sciences
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Physics
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Physics And Astronomy
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