Zn incorporation and band gap shrinkage in p-type GaAs by Hudait, Mantu Kumar, Modak, Prasanta, Hardikar, Shyam, Krupanidhi, S. B.

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OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge by Modak, Prasanta, Kumar Hudait, Mantu, Hardikar, Shyam, Krupanidhi, S.B

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Realizing high breakdown voltages (>600 V) in partial SOI technology by Tadikonda, Ramakrishna, Hardikar, Shyam, Sankara Narayanan, E.M.

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Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping by Hardikar, S., Tadikonda, R., Green, D.W., Vershinin, K.V., Narayanan, E.M.S.

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A fast switching segmented anode NPN controlled LIGBT by Hardikar, S., Tadikonda, R., Sweet, M., Vershinin, K., Narayanan, E.M.S.

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Effect of [formula omitted] ratio on the optical properties of MOCVD grown undoped GaAs layers by Hudait, Mantu Kumar, Modak, Prasanta, Hardikar, Shyam, Krupanidhi, S.B.

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Performance analysis of the segment npn anode LIGBT by Green, D.W., Sweet, M., Vershinin, K.V., Hardikar, S., Narayanan, E.M.S.

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Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology by Tadikonda, R., Hardikar, S., Green, D.W., Sweet, M., Narayanan, E.M.S.

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Transient substrate currents in junction-isolated lateral IGBT by Hardikar, S., Green, D.W., Narayanan, E.M.S.

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Design and analysis of multichannel LIGBTs in junction isolation technology by Green, D.W., Hardikar, S., Tadikonda, R., Sweet, M., Vershinin, K.V., Narayanan, E.M.S.

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Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers by MANTU KUMAR HUDAIT, MODAK, P, HARDIKAR, S, KRUPANIDHI, S. B

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Potential of high-k dielectrics for lateral power and high voltage devices by Tadikonda, R., Hardikar, S., Narayanan, E.M.S.

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