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Search Results - Harrang, J.P.
Search Results - Harrang, J.P.
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Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation
by
Fuji, H.S.
,
Ray, S.
,
Williams, T.J.
,
Griem, H.T.
,
Harrang, J.P.
,
Daniels, R.R.
,
LaGasse, M.J.
,
West, D.L.
Published in
IEEE journal of quantum electronics
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Burst-mode bit-error-rate characterization of dual-rate MIL-STD-1773 transceiver
by
Kim, J.H.
,
Bonebright, R.K.
,
Harrang, J.P.
,
Bocek, T.
,
Chan, E.Y.
,
Chi-Shain Hong
Published in
IEEE photonics technology letters
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A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach
by
Daniels, R.R.
,
Yang, A.T.
,
Harrang, J.P.
Published in
IEEE transactions on electron devices
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High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration
by
Harrang, J.P.
,
Daniels, R.R.
,
Fuji, H.S.
,
Griem, H.T.
,
Ray, S.
Published in
IEEE electron device letters
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Use of capacitance techniques in the study of two-dimensional layers in silicon mosfets
by
Goodall, R.K.
,
Higgins, R.J.
,
Harrang, J.P.
Published in
Surface science
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Airborne information and reconnaissance network
by
Ayyagari, A.
,
Harrang, J.P.
,
Ray, S.
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Conference Proceeding
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Use of capacitance techniques in the study of two-dimensional layers in silicon MOSFETs
by
Goodall, R.K.
,
Higgins, R.J.
,
Harrang, J.P.
Published in
Surface science letters
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Modeling and simulation of higb-frequency integrated circuits based on scattering parameters
by
Yang, A.T.
,
Chan, C.H.
,
Yao, J.T.
,
Daniels, R.R.
,
Harrang, J.P.
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